A sensitive, temperature-compensated, zero-bias floating gate MOSFET dosimeter

IEEE Transactions on Nuclear Science

Volumn 51, Issue 3 IV, 2004, Pages 1277-1282

  Tarr, N Garry ^a   Shortt, Ken ^b,c   Wang, Yanbin ^a   Thomson, Ian ^d  

^a CARLETON UNIVERSITY   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c INTERNATIONAL ATOMIC ENERGY AGENCY   (Austria)

^d Thomson and Nielsen Electronics   (Canada)

Author keywords

CMOS; Detector; Dosimetry; Gamma rays; MOSFET; RADFET

Indexed keywords

CMOS INTEGRATED CIRCUITS; DOSIMETRY; GAMMA RAYS; GATES (TRANSISTOR); MICROPROCESSOR CHIPS; MOSFET DEVICES; RADIATION DETECTORS; SENSORS;

FOATING GATE SENSOR TRANSISTORS; RADFET; RADIATION SENSING MOSFETS (RADFET); REFERENCE TRANSISTORS;

DOSIMETERS;

EID: 3342954903     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.829372     Document Type: Article

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