Ionizing radiation effects on floating gates

Applied Physics Letters

Volumn 85, Issue 3, 2004, Pages 485-487

  Cellere, G ^a   Paccagnella, A ^a   Visconti, A ^b   Bonanomi, M ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DATA STORAGE EQUIPMENT; DIELECTRIC MATERIALS; ELECTRIC CHARGE; ELECTRIC DISCHARGES; ELECTRIC FIELDS; ELECTRON IRRADIATION; PHOTOCURRENTS; PHOTOEMISSION; PRINTED CIRCUIT BOARDS; THRESHOLD VOLTAGE; X RAYS;

CHARGE DENSITY; FLOATING GATES (FG); SINGLE EVENT EFFECTS (SEE); TOTAL IONIZING DOSE (TID); TUNNEL OXIDES;

IONIZING RADIATION;

EID: 4043079778     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1773932     Document Type: Article

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