Radiation effects on floating-gate memory cells

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 2222-2228

  Cellere, Giorgio ^a,b   Pellati, Paolo ^c   Chimenton, Andrea ^c   Wyss, Jeff ^d   Modelli, Alberto ^e   Larcher, Luca ^a,f   Paccagnella, Alessandro ^a,b  

^a IEEE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c UNIVERSITY OF FERRARA   (Italy)

^d UNIVERSITY OF CASSINO AND SOUTHERN LAZIO   (Italy)

^e STMICROELECTRONICS   (Italy)

^f UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

EPROM; Gate leakage; Single event transients (SETs); Transient effects

Indexed keywords

LINEAR ENERGY TRANSFER (LET);

ELECTRIC CURRENTS; ENERGY TRANSFER; GATES (TRANSISTOR); IRRADIATION; RADIATION EFFECTS; SEMICONDUCTOR DEVICE STRUCTURES; THRESHOLD VOLTAGE;

FLASH MEMORY;

EID: 0035722077     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983199     Document Type: Conference Paper

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