-
1
-
-
35348909664
-
The high-k solution
-
DOI 10.1109/MSPEC.2007.4337663
-
M. T. Bohr, R. S. Chau, T. Ghani, and K. Mistry, IEEE Spectrum 44, 29 (2007). 10.1109/MSPEC.2007.4337663 (Pubitemid 47570274)
-
(2007)
IEEE Spectrum
, vol.44
, Issue.10
, pp. 29-35
-
-
Bohr, M.T.1
Chau, R.S.2
Ghani, T.3
Mistry, K.4
-
2
-
-
31044455312
-
High dielectric constant gate oxides for metal oxide Si transistors
-
DOI 10.1088/0034-4885/69/2/R02, PII S0034488506721856
-
J. Robertson, Rep. Prog. Phys. 69, 327 (2006). 10.1088/0034-4885/69/2/R02 (Pubitemid 43121643)
-
(2006)
Reports on Progress in Physics
, vol.69
, Issue.2
, pp. 327-396
-
-
Robertson, J.1
-
4
-
-
58149242281
-
-
10.1063/1.3041628
-
J. Robertson, J. Appl. Phys. 104, 124111 (2008). 10.1063/1.3041628
-
(2008)
J. Appl. Phys.
, vol.104
, pp. 124111
-
-
Robertson, J.1
-
5
-
-
4944257396
-
-
10.1063/1.1776636
-
H. Kim, P. C. McIntyre, C. O. Chui, K. C. Saraswat, S. Stemmer, J. App. Phys. 96, 3467 (2004). 10.1063/1.1776636
-
(2004)
J. App. Phys.
, vol.96
, pp. 3467
-
-
Kim, H.1
McIntyre, P.C.2
Chui, C.O.3
Saraswat, K.C.4
Stemmer, S.5
-
6
-
-
84865228289
-
-
T. Ando, M. M. Frank, K. Choi, C. Choi, J. Bruley, M. Hopstaken, M. Copel, E. Cartier, A. Kerber, A. Callegari, D. Lacey, S. Brown, Q. Yang, and V. Narayanan, Tech. Dig.-Int. Electron Devices Meet. 2009, 394.
-
Tech. Dig. - Int. Electron Devices Meet.
, vol.2009
, pp. 394
-
-
Ando, T.1
Frank, M.M.2
Choi, K.3
Choi, C.4
Bruley, J.5
Hopstaken, M.6
Copel, M.7
Cartier, E.8
Kerber, A.9
Callegari, A.10
Lacey, D.11
Brown, S.12
Yang, Q.13
Narayanan, V.14
-
7
-
-
79958073346
-
-
10.1016/j.mee.2011.03.121
-
L. A. Ragnarsson, T. Chiarella, M. Togo, T. Schram, P. Absil, and T. Hoffmann, Microelectron. Eng. 88, 1317 (2011). 10.1016/j.mee.2011.03.121
-
(2011)
Microelectron. Eng.
, vol.88
, pp. 1317
-
-
Ragnarsson, L.A.1
Chiarella, T.2
Togo, M.3
Schram, T.4
Absil, P.5
Hoffmann, T.6
-
8
-
-
77950491947
-
-
10.1063/1.3373914
-
T. Ando, M. Copel, J. Bruley, M. M. Frank, H. Watanable, and V. Narayanan, Appl. Phys. Lett. 96, 132904 (2010). 10.1063/1.3373914
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 132904
-
-
Ando, T.1
Copel, M.2
Bruley, J.3
Frank, M.M.4
Watanable, H.5
Narayanan, V.6
-
9
-
-
0034217328
-
3 gate dielectric with equivalent oxide thickness of 5 angstrom
-
DOI 10.1109/55.847374
-
Y. H. Wu, M. Y. Yang, A. Chin, W. J. Chen, and C. M. Kwei, IEEE Electron Device Lett. 21, 341 (2000). 10.1109/55.847374 (Pubitemid 32075941)
-
(2000)
IEEE Electron Device Letters
, vol.21
, Issue.7
, pp. 341-343
-
-
Wu, Y.H.1
Yang, M.Y.2
Chin, A.3
Chen, W.J.4
Kwei, C.M.5
-
10
-
-
33947326574
-
3 thin films for high- K application
-
DOI 10.1063/1.2713142
-
A. Laha, H. J. Osten, and A. Fissel, Appl. Phys. Lett. 90, 113508 (2007). 10.1063/1.2713142 (Pubitemid 46439851)
-
(2007)
Applied Physics Letters
, vol.90
, Issue.11
, pp. 113508
-
-
Laha, A.1
Osten, H.J.2
Fissel, A.3
-
11
-
-
12144287611
-
-
10.1016/j.mee.2004.01.005
-
T. Hattori, T. Yoshida, T. Shiraishi, K. Takahashi, H. Nohira, S. Joumori, K. Nakajima, M. Suzuki, K. Kimura, S. Ohmi, and H. Iwai, Microelectron. Eng. 72, 283 (2004). 10.1016/j.mee.2004.01.005
-
(2004)
Microelectron. Eng.
, vol.72
, pp. 283
-
-
Hattori, T.1
Yoshida, T.2
Shiraishi, T.3
Takahashi, K.4
Nohira, H.5
Joumori, S.6
Nakajima, K.7
Suzuki, M.8
Kimura, K.9
Ohmi, S.10
Iwai, H.11
-
12
-
-
4043099571
-
-
10.1063/1.1773360
-
G. Scarel, E. Bonera, C. Wiemer, G. Tallarida, S. Spiga, and M. Fanciulli, Appl. Phys. Lett. 85, 630 (2004). 10.1063/1.1773360
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 630
-
-
Scarel, G.1
Bonera, E.2
Wiemer, C.3
Tallarida, G.4
Spiga, S.5
Fanciulli, M.6
-
13
-
-
84865220009
-
-
10.1063/1.1829781
-
J. Kwo, M. Hong, A. R. Kortan, K. L. Queeney, Y. J. Chabal, R. L. Opila, D. A. Muller, S. N. G. Chu, B. J. Sapjeta, T. S. Lay, J. P. Mannaerts, T. Boone, H. W. Krautter, J. J. Krajewski, A. M. Sergnt, and J. M. Rosamilia, J. Appl. Phys. 89, 5917 (2001). 10.1063/1.1829781
-
(2001)
J. Appl. Phys.
, vol.89
, pp. 5917
-
-
Kwo, J.1
Hong, M.2
Kortan, A.R.3
Queeney, K.L.4
Chabal, Y.J.5
Opila, R.L.6
Muller, D.A.7
Chu, S.N.G.8
Sapjeta, B.J.9
Lay, T.S.10
Mannaerts, J.P.11
Boone, T.12
Krautter, H.W.13
Krajewski, J.J.14
Sergnt, A.M.15
Rosamilia, J.M.16
-
14
-
-
1242308912
-
-
10.1063/1.1644055
-
L. F. Edge, D. G. Schlom, S. A. Chambers, E. Cicerrella, J. L. Freeouf, B. Hollander, and J. Schubert, Appl. Phys. Lett. 84, 726 (2004). 10.1063/1.1644055
-
(2004)
Appl. Phys. Lett.
, vol.84
, pp. 726
-
-
Edge, L.F.1
Schlom, D.G.2
Chambers, S.A.3
Cicerrella, E.4
Freeouf, J.L.5
Hollander, B.6
Schubert, J.7
-
15
-
-
33751561573
-
Amorphous lanthanum lutetium oxide thin films as an alternative high- κ gate dielectric
-
DOI 10.1063/1.2393156
-
J. M. J. Lopes, M. Roeckerath, T. Heeg, E. Rije, J. Schubert, S. Mantl, V. V. Afanas'ev, S. Shamuilia, A. Stesmans, Y. Jia, and D. G. Schlom, Appl. Phys. Lett. 89, 222902 (2006). 10.1063/1.2393156 (Pubitemid 44847577)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.22
, pp. 222902
-
-
Lopes, J.M.J.1
Roeckerath, M.2
Heeg, T.3
Rije, E.4
Schubert, J.5
Mantl, S.6
Afanas'Ev, V.V.7
Shamuilia, S.8
Stesmans, A.9
Jia, Y.10
Schlom, D.G.11
-
16
-
-
37549044714
-
-
10.1007/s00339-007-4327-8
-
J. Schubert, O. Trithaveesak, W. Zander, and D. G. Schlom, Appl. Phys. A 90, 577 (2008). 10.1007/s00339-007-4327-8
-
(2008)
Appl. Phys. A
, vol.90
, pp. 577
-
-
Schubert, J.1
Trithaveesak, O.2
Zander, W.3
Schlom, D.G.4
-
17
-
-
84865211428
-
-
V. V. Afanasev, A. Stesmans, C. Zhao, M. Caymax, T. Heeg, J. Schubert, Y. Jia, D. G. Schlom, and G. Lucovsky, Appl. Phys. Lett. 85, 182781 (2004).
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 182781
-
-
Afanasev, V.V.1
Stesmans, A.2
Zhao, C.3
Caymax, M.4
Heeg, T.5
Schubert, J.6
Jia, Y.7
Schlom, D.G.8
Lucovsky, G.9
-
18
-
-
79953855293
-
-
10.1063/1.3562321
-
L. F. Edge, T. Vo, V. K. Paruchuri, R. Iijima, J. Bruley, J. Jordan-Sweet, B. P. Linder, A. J. Kellock, T. Tsunoda, and S. R. Shinde, Appl. Phys. Lett. 98, 122905 (2011). 10.1063/1.3562321
-
(2011)
Appl. Phys. Lett.
, vol.98
, pp. 122905
-
-
Edge, L.F.1
Vo, T.2
Paruchuri, V.K.3
Iijima, R.4
Bruley, J.5
Jordan-Sweet, J.6
Linder, B.P.7
Kellock, A.J.8
Tsunoda, T.9
Shinde, S.R.10
-
19
-
-
51849128695
-
-
10.1063/1.2968660
-
E. D. Ozben, J. M. J. Lopes, M. Roeckerath, S. Lenk, B. Hollander, Y. Jia, D. G. Schlom, J. Schubert, and S. Mantl, Appl. Phys. Lett. 93, 052902 (2008). 10.1063/1.2968660
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 052902
-
-
Ozben, E.D.1
Lopes, J.M.J.2
Roeckerath, M.3
Lenk, S.4
Hollander, B.5
Jia, Y.6
Schlom, D.G.7
Schubert, J.8
Mantl, S.9
-
20
-
-
33845384913
-
Dysprosium scandate thin films as an alternate amorphous gate oxide prepared by metal-organic chemical vapor deposition
-
DOI 10.1063/1.2402121
-
R. Thomas, P. Ehrhart, M. Luysberg, M. Boese, R. Waser, M. Roeckerath, E. Rije, J. Schubert, S. Van Elshocht, and M. Caymax, Appl. Phys. Lett. 89, 232902 (2006). 10.1063/1.2402121 (Pubitemid 44907269)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.23
, pp. 232902
-
-
Thomas, R.1
Ehrhart, P.2
Luysberg, M.3
Boese, M.4
Waser, R.5
Roeckerath, M.6
Rije, E.7
Schubert, J.8
Van Elshocht, S.9
Caymax, M.10
-
21
-
-
27344443406
-
2 high-dielectric-constant gate oxide
-
DOI 10.1063/1.2119425, 183505
-
K. Xiong, J. Robertson, M. C. Gibson, and S. J. Clark, Appl. Phys. Lett. 87, 183505 (2005). 10.1063/1.2119425 (Pubitemid 41528237)
-
(2005)
Applied Physics Letters
, vol.87
, Issue.18
, pp. 1-3
-
-
Xiong, K.1
Robertson, J.2
Gibson, M.C.3
Clark, S.J.4
-
23
-
-
34848862985
-
-
E. Cartier, B. P. Linder, V. Narayanan, and V. K. Paruchuri, Tech. Dig.-Int. Electron Devices Meet 2006, 321;
-
Tech. Dig. - Int. Electron Devices Meet
, vol.2006
, pp. 321
-
-
Cartier, E.1
Linder, B.P.2
Narayanan, V.3
Paruchuri, V.K.4
-
24
-
-
34547277537
-
Oxygen vacancies in high dielectric constant oxide-semiconductor films
-
DOI 10.1103/PhysRevLett.98.196101
-
S. Guha and V. Narayanan, Phys. Rev. Lett. 98, 196101 (2007). 10.1103/PhysRevLett.98.196101 (Pubitemid 47139496)
-
(2007)
Physical Review Letters
, vol.98
, Issue.19
, pp. 196101
-
-
Guha, S.1
Narayanan, V.2
-
25
-
-
11144319376
-
Oxygen vacancy induced substantial threshold voltage shifts in the Hf-based high-K MISFET with p+poly-Si gates -A theoretical approach
-
DOI 10.1143/JJAP.43.L1413
-
K. Shiraishi, K. Yamada, K. Torii, Y. Akasaka, K. Nakajima, M. Konno, T. Chikyow, H. Kitajima, and T. Arikado, Jpn. J. Appl. Phys., Part 2 43, L1413 (2004); 10.1143/JJAP.43.L1413 (Pubitemid 40021492)
-
(2004)
Japanese Journal of Applied Physics, Part 2: Letters
, vol.43
, Issue.11 A
-
-
Shiraishi, K.1
Yamada, K.2
Torii, K.3
Akasaka, Y.4
Nakajima, K.5
Konno, M.6
Chikyow, T.7
Kitajima, H.8
Arikado, T.9
-
26
-
-
34547917220
-
Modified oxygen vacancy induced fermi level pinning model extendable to P-metal pinning
-
DOI 10.1143/JJAP.45.L1289
-
Y. Akasaka, Jpn. J. Appl. Phys., Part 1 45, 1129 (2006); 10.1143/JJAP.45.L1289 (Pubitemid 47252525)
-
(2006)
Japanese Journal of Applied Physics, Part 2: Letters
, vol.45
, Issue.46-50
-
-
Akasaka, Y.1
Nakamura, G.2
Shiraishi, K.3
Umezawa, N.4
Yamabe, K.5
Ogawa, O.6
Lee, M.7
Amiaka, T.8
Kasuya, T.9
Watanabe, H.10
Chikyow, T.11
Ootsuka, F.12
Nara, Y.13
Nakamura, K.14
-
27
-
-
34848861772
-
Fermi level pinning by defects in Hf O2 -metal gate stacks
-
DOI 10.1063/1.2790479
-
J. Robertson, O. Sharia, and A. A. Demkov, Appl. Phys. Lett. 91, 132912 (2007). 10.1063/1.2790479 (Pubitemid 47502599)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.13
, pp. 132912
-
-
Robertson, J.1
Sharia, O.2
Demkov, A.A.3
-
28
-
-
33749499316
-
-
H. H. Tseng, P. J. Tobin, E. A. Herbert, S. Kalpat, M. E. Ramon, L. Fonseca, Z. X. Jiang, J. K. Schaeffer, R. I. Hegde, D. H. Triyoso, D. C. Gilmer, W. J. Taylor, C. C. Capasso, O. Adetutu, D. Sing, J. Conner, E. Luckowski, B. W. Chan, A. Haggag, and B. E. White, Tech. Dig.-Int. Electron Devices Meet. 2005, 713.
-
Tech. Dig. - Int. Electron Devices Meet.
, vol.2005
, pp. 713
-
-
Tseng, H.H.1
Tobin, P.J.2
Herbert, E.A.3
Kalpat, S.4
Ramon, M.E.5
Fonseca, L.6
Jiang, Z.X.7
Schaeffer, J.K.8
Hegde, R.I.9
Triyoso, D.H.10
Gilmer, D.C.11
Taylor, W.J.12
Capasso, C.C.13
Adetutu, O.14
Sing, D.15
Conner, J.16
Luckowski, E.17
Chan, B.W.18
Haggag, A.19
White, B.E.20
more..
-
29
-
-
33749491465
-
-
M. Inoue, S. Tsujikawa, M. Mizutani, K. Nomura, T. Hayashi, K. Shiga, J. Yugami, J. Tsuchimoto, Y. Ohno, and M. Yoneda, Tech. Dig.-Int. Electron Devices Meet. 2005, 425.
-
Tech. Dig. - Int. Electron Devices Meet.
, vol.2005
, pp. 425
-
-
Inoue, M.1
Tsujikawa, S.2
Mizutani, M.3
Nomura, K.4
Hayashi, T.5
Shiga, K.6
Yugami, J.7
Tsuchimoto, J.8
Ohno, Y.9
Yoneda, M.10
-
30
-
-
33748713605
-
-
K. I. Seo, R. Sreenivasan, P. C. McIntyre, and K. C. Saraswat, Tech. Dig.-Int. Electron Devices Meet 2005, 429.
-
Tech. Dig. - Int. Electron Devices Meet
, vol.2005
, pp. 429
-
-
Seo, K.I.1
Sreenivasan, R.2
McIntyre, P.C.3
Saraswat, K.C.4
-
31
-
-
0038712510
-
-
10.1109/LED.2003.810881
-
C. H. Choi, S. J. Rhee, T. S. Jeon, N. Lu, J. H. Sim, R. Clark, M. Niwa, and D. L. Kwong, IEEE Electron Device Lett. 24, 215 (2003). 10.1109/LED.2003. 810881
-
(2003)
IEEE Electron Device Lett.
, vol.24
, pp. 215
-
-
Choi, C.H.1
Rhee, S.J.2
Jeon, T.S.3
Lu, N.4
Sim, J.H.5
Clark, R.6
Niwa, M.7
Kwong, D.L.8
-
32
-
-
0042158768
-
-
10.1063/1.1592639
-
R. J. Carter, E. Cartier, A. Kerber, L. Pantisano, T. Schram, and S. DeGendt, Appl. Phys. Lett. 83, 533 (2003). 10.1063/1.1592639
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 533
-
-
Carter, R.J.1
Cartier, E.2
Kerber, A.3
Pantisano, L.4
Schram, T.5
Degendt, S.6
-
33
-
-
79956030489
-
y gate dielectrics
-
DOI 10.1063/1.1510155
-
C. S. Kang, H. J. Cho, K. Onishi, R. Nieh, R. Choi, S. Gopalan, S. Krishnan, J. H. Han, and J. C. Lee, Appl. Phys. Lett. 81, 2593 (2002). 10.1063/1.1510155 (Pubitemid 35312750)
-
(2002)
Applied Physics Letters
, vol.81
, Issue.14
, pp. 2593
-
-
Kang, C.S.1
Cho, H.-J.2
Onishi, K.3
Nieh, R.4
Choi, R.5
Gopalan, S.6
Krishnan, S.7
Han, J.H.8
Lee, J.C.9
-
34
-
-
20244379590
-
2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process
-
DOI 10.1109/LED.2005.845496
-
J. F. Kang, H. Y. Yu, C. Ren, X. P. Wang, M. F. Li, D. S. H. Chan, Y. C. Yeo, N. Sa, H. Yang, X. Y. Liu, R. Q. Han, and D. L. Kwong, IEEE Electron Device Lett. 26, 237 (2005). 10.1109/LED.2005.845496 (Pubitemid 40573219)
-
(2005)
IEEE Electron Device Letters
, vol.26
, Issue.4
, pp. 237-239
-
-
Kang, F.J.1
Yu, H.Y.2
Ren, C.3
Wang, X.P.4
Li, M.-F.5
Chan, D.S.H.6
Yeo, Y.-C.7
Sa, N.8
Yang, H.9
Liu, X.Y.10
Han, R.Q.11
Kwong, D.-L.12
-
35
-
-
8144230425
-
-
10.1109/TED.2004.836533
-
X. G. Wang, J. Liu, F. Zhu, M. Yamada, and D. L. Kwong, IEEE Trans. Electron Devices 51, 1798 (2004). 10.1109/TED.2004.836533
-
(2004)
IEEE Trans. Electron Devices
, vol.51
, pp. 1798
-
-
Wang, X.G.1
Liu, J.2
Zhu, F.3
Yamada, M.4
Kwong, D.L.5
-
36
-
-
33745745755
-
y
-
DOI 10.1016/j.sse.2006.05.008, PII S0038110106001778
-
X. P. Wang, M. F. Li, A. Chin, C. X. Zhu, J. Shao, W. Lu, X. C. Shen, X. F. Yu, R. Chi, C. Shen, A. C. H. Huan, J. S. Pan, A. Y. Du, P. Lo, D. S. H. Chan, and D. L. Kwong, Solid-State Electron. 50, 986 (2006). 10.1016/j.sse.2006.05.008 (Pubitemid 44015837)
-
(2006)
Solid-State Electronics
, vol.50
, Issue.6
, pp. 986-991
-
-
Wang, X.P.1
Li, M.F.2
Chin, A.3
Zhu, C.X.4
Shao, J.5
Lu, W.6
Shen, X.C.7
Yu, X.F.8
Chi, R.9
Shen, C.10
Huan, A.C.H.11
Pan, J.S.12
Du, A.Y.13
Lo, P.14
Chan, D.S.H.15
Kwong, D.-L.16
-
37
-
-
33749489613
-
2 gate oxide by fluorine
-
DOI 10.1063/1.2360190
-
K. Tse and J. Robertson, Appl. Phys. Lett. 89, 142914 (2006); 10.1063/1.2360190 (Pubitemid 44522250)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.14
, pp. 142914
-
-
Tse, K.1
Robertson, J.2
-
38
-
-
33847634809
-
Defects and their passivation in high K gate oxides
-
DOI 10.1016/j.mee.2006.12.009, PII S0167931707000068
-
K. Tse and J. Robertson, Microelectron. Eng. 84, 663 (2007). 10.1016/j.mee.2006.12.009 (Pubitemid 46356629)
-
(2007)
Microelectronic Engineering
, vol.84
, Issue.4
, pp. 663-668
-
-
Tse, K.1
Robertson, J.2
-
39
-
-
20244386271
-
First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high- k dielectrics
-
DOI 10.1063/1.1899232, 143507
-
N. Umezawa, K. Shiraishi, T. Ohno, H. Watanabe, T. Chikyow, K. Torri, K. Yamabe, K. Yamada, H. Kitajima, and T. Arikado, Appl. Phys. Lett. 86, 143507 (2005). 10.1063/1.1899232 (Pubitemid 40537431)
-
(2005)
Applied Physics Letters
, vol.86
, Issue.14
, pp. 1-3
-
-
Umezawa, N.1
Shiraishi, K.2
Ohno, T.3
Watanabe, H.4
Chikyow, T.5
Torii, K.6
Yamabe, K.7
Yamada, K.8
Kitajima, H.9
Arikado, T.10
-
42
-
-
0347252670
-
-
10.1002/(SICI)1097-461X(2000)77:5<895::AID-QUA10>3.0.CO;2-C
-
V. Milman, B. Winkler, J. A. White, C. J. Pickard, and M. C. Payne, Int. J. Quantum Chem. 77, 895 (2000). 10.1002/(SICI)1097-461X(2000)77:5<895::AID- QUA10>3.0.CO;2-C
-
(2000)
Int. J. Quantum Chem.
, vol.77
, pp. 895
-
-
Milman, V.1
Winkler, B.2
White, J.A.3
Pickard, C.J.4
Payne, M.C.5
-
43
-
-
33746062052
-
3
-
DOI 10.1063/1.2221521
-
K. Xiong, J. Robertson, and S. J. Clark, Appl. Phys. Lett. 89, 022907 (2006); 10.1063/1.2221521 (Pubitemid 44079088)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.2
, pp. 022907
-
-
Xiong, K.1
Robertson, J.2
Clark, S.J.3
-
44
-
-
36148999800
-
3
-
DOI 10.1016/j.mee.2007.01.181, PII S0167931707002547, Advanced Gate Stack Technology (ISAGST)
-
K. Xiong, J. Robertson, and S. J. Clark, Microelectron. Eng. 85, 65 (2008). 10.1016/j.mee.2007.01.181 (Pubitemid 350116996)
-
(2008)
Microelectronic Engineering
, vol.85
, Issue.1
, pp. 65-69
-
-
Xiong, K.1
Robertson, J.2
Clark, S.J.3
-
46
-
-
34547455371
-
3 films on SiGe
-
DOI 10.1063/1.2762277
-
Y. Y. Mi, S. J. Wang, J. W. Chai, H. L. Seng, J. S. Pan, Y. L. Foo, C. H. A. Huan, and C. K. Ong, Appl. Phys. Lett. 91, 042102 (2007). 10.1063/1.2762277 (Pubitemid 47174456)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.4
, pp. 042102
-
-
Mi, Y.Y.1
Wang, S.J.2
Chai, J.W.3
Seng, H.L.4
Pan, J.S.5
Foo, Y.L.6
Huan, C.H.A.7
Ong, C.K.8
-
47
-
-
0042267252
-
-
10.1063/1.1586976
-
X. B. Lu, Z. G. Liu, Y. P. Wang, Y. Yang, X. P. Wang, H. W. Zhou, and B. Y. Nguyen, J. Appl. Phys. 94, 1229 (2003). 10.1063/1.1586976
-
(2003)
J. Appl. Phys.
, vol.94
, pp. 1229
-
-
Lu, X.B.1
Liu, Z.G.2
Wang, Y.P.3
Yang, Y.4
Wang, X.P.5
Zhou, H.W.6
Nguyen, B.Y.7
-
48
-
-
84946400012
-
-
H. W. Zhou, X. P. Wang, B. Y. Nguyen, R. Rai, L. Prabhu, J. Jiang, V. Kaushik, J. Schaeffer, M. Zavala, E. Duda, R. Liu, S. Zonner, B. Hradsky, P. Fejes, D. Theodore, G. Edwards, R. Gregory, R. Wang, H. Yam, J. Yu, H. B. Lu, Z. H. Chen, X. B. Lu, and Z. G. Liu, 2003 IEEE Conference on Electron Devices and Solid-State Circuits (2003), p. 357.
-
(2003)
2003 IEEE Conference on Electron Devices and Solid-State Circuits
, pp. 357
-
-
Zhou, H.W.1
Wang, X.P.2
Nguyen, B.Y.3
Rai, R.4
Prabhu, L.5
Jiang, J.6
Kaushik, V.7
Schaeffer, J.8
Zavala, M.9
Duda, E.10
Liu, R.11
Zonner, S.12
Hradsky, B.13
Fejes, P.14
Theodore, D.15
Edwards, G.16
Gregory, R.17
Wang, R.18
Yam, H.19
Yu, J.20
Lu, H.B.21
Chen, Z.H.22
Lu, X.B.23
Liu, Z.G.24
more..
-
49
-
-
13844298381
-
y films for high-k gate dielectric applications
-
DOI 10.1088/0022-3727/38/3/013
-
G. H. Shi, X. B. Lu, X. K. Kong, and Z. G. Liu, J. Phys. D: Appl. Phys. 38, 442 (2005). 10.1088/0022-3727/38/3/013 (Pubitemid 40253337)
-
(2005)
Journal of Physics D: Applied Physics
, vol.38
, Issue.3
, pp. 442-445
-
-
Shi, G.H.1
Lu, X.B.2
Kong, X.K.3
Liu, Z.G.4
-
50
-
-
80055009907
-
-
10.1063/1.3646104
-
A. Laha, B. Ai, P. Babu, A. Fissel, and H. J. Osten, Appl. Phys. Lett. 99, 152902 (2011). 10.1063/1.3646104
-
(2011)
Appl. Phys. Lett.
, vol.99
, pp. 152902
-
-
Laha, A.1
Ai, B.2
Babu, P.3
Fissel, A.4
Osten, H.J.5
-
51
-
-
77957880622
-
-
T. Hosoi, M. Saeki, Y. Oku, H. Arimura, N. Kitano, K. Shiraishi, K. Yamada, T. Shimura, and H. Watanabe, Tech. Digest VLSI 2010, 179.
-
Tech. Digest VLSI
, vol.2010
, pp. 179
-
-
Hosoi, T.1
Saeki, M.2
Oku, Y.3
Arimura, H.4
Kitano, N.5
Shiraishi, K.6
Yamada, K.7
Shimura, T.8
Watanabe, H.9
-
52
-
-
84861819129
-
-
10.1063/1.4722782
-
Y. Ebuihara, K. Chokawa, S. Kato, K. Kamiya, and K. Shiraishi, Appl. Phys. Lett. 100, 212110 (2012). 10.1063/1.4722782
-
(2012)
Appl. Phys. Lett.
, vol.100
, pp. 212110
-
-
Ebuihara, Y.1
Chokawa, K.2
Kato, S.3
Kamiya, K.4
Shiraishi, K.5
-
53
-
-
31644438937
-
2 gate dielectric layers deposited by molecular-beam epitaxy
-
DOI 10.1063/1.2163985, 024508
-
Z. M. Rittersma, J. C. Hooker, G. Vellianitis, J. P. Loquet, C. Marchoni, N. Sousa, J. Fompeyrine, L. Pantisano, S. DeGendt, and A. Dimoulas, J. Appl. Phys. 99, 024508 (2006). 10.1063/1.2163985 (Pubitemid 43172432)
-
(2006)
Journal of Applied Physics
, vol.99
, Issue.2
, pp. 1-8
-
-
Rittersma, Z.M.1
Hooker, J.C.2
Vellianitis, G.3
Locquet, J.-P.4
Marchiori, C.5
Sousa, M.6
Fompeyrine, J.7
Pantisano, L.8
Deweerd, W.9
Schram, T.10
Rosmeulen, M.11
De Gendt, S.12
Dimoulas, A.13
-
54
-
-
33746278810
-
x films for an amorphous high-k gate insulator
-
DOI 10.1063/1.2227630
-
Y. Yamamoto, K. Kita, K. Kyuno, and A. Toriumi, Appl. Phys. Lett. 89, 032903 (2006). 10.1063/1.2227630 (Pubitemid 44107076)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.3
, pp. 032903
-
-
Yamamoto, Y.1
Kita, K.2
Kyuno, K.3
Toriumi, A.4
|