Ultrathin EOT high-κ/metal gate devices for future technologies: Challenges, achievements and perspectives (invited)

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1317-1322

  Ragnarsson, L A ^a   Chiarella, T ^a   Togo, M ^a   Schram, T ^a   Absil, P ^a   Hoffmann, T ^a  

^a BE 3001   (Belgium)

Author keywords

ALD; Atomic layer deposition; Bulk FinFETs; Electron mobility; FinFETs; Hafnium oxide; High ; MOSFETs; Physical vapor deposition; PVD; TaN; TiN; Ultrathin EOT

Indexed keywords

ALD; ATOMIC LAYER; BULK-FINFETS; FINFETS; MOSFETS; TAN; ULTRA-THIN;

ATOMIC LAYER DEPOSITION; ELECTRON MOBILITY; GATES (TRANSISTOR); HAFNIUM; HAFNIUM OXIDES; INTEGRATED CIRCUITS; PHYSICAL VAPOR DEPOSITION; SILICA; TANTALUM COMPOUNDS; TITANIUM NITRIDE;

MOS DEVICES;

EID: 79958073346     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.121     Document Type: Conference Paper

References (30)

1. L.-A. Ragnarsson, Z. Li, J. Tseng, T. Schram, E. Rohr, M.J. Cho, T. Kauerauf, T. Conard, Y. Okuno, B. Parvais, P. Absil, S. Biesemans, T.Y. Hoffmann, in: IEDM Tech. Dig. 2009, Baltimore, MD, USA.
2. T. Ando, M. Copel, J. Bruley, M.M. Frank, H. Watanabe, and V. Narayanan Appl. Phys. Lett. 96 2010 132904
3. S. Saito, Y. Shimamoto, K. Torii, Y. Manabe, M. Caymax, J.W. Maes, M. Hiratani, S. Kimura, in: Solid State Devices and Materials (SSDM) 2002, pp. 704-705.
4. T. Chiarella, L. Witters, A. Mercha, C. Kerner, R. Dittrich, M. Rakowski, C. Ortolland, L.-A. Ragnarsson, B. Parvais, A.D. Keersgieter, S. Kubicek, A. Redolfi, R. Rooyackers, C. Vrancken, S. Brus, A. Lauwers, P. Absil, S. Biesemans, T. Hoffmann, in: 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, Greece, pp. 85-88.
5. C. Fenouillet-Beranger, O. Thomas, P. Perreau, J.-P. Noel, A. Bajolet, S. Haendler, L. Tosti, S. Barnola, R. Beneyton, C. Perrot, C. de Buttet, F. Abbate, F. Baron, B. Pernet, Y. Campidelli, L. Pinzelli, P. Gouraud, M. Cassé, C. Borowiak, O. Weber, F. Andrieu, K. Bourdelle, B. Nguyen, F. Boedt, S. Denorme, F. Boeuf, O. Faynot, T. Skotnicki, in: VLSI Symp. Tech. Dig., 2010, p. 65.
6. L. Witters, S. Takeoka, S. Yamaguchi, A. Hikavyy, D. Shamiryan, M. Cho, T. Chiarella, L.-A. Ragnarsson, R. Loo, C. Kerner, Y. Crabbe, J. Franco, J. Tseng, W. Wang, E. Rohr, T. Schram, O. Richard, H. Bender, S. Biesemans, P. Absil, T. Hoffmann, in: 2010 IEEE Symposium on VLSI Technology, Honolulu, Hawaii, pp. 181-182.
7. J. Mitard, L. Witters, M. Bardon, P. Christie, J. Franco, A. Mercha, P. Magnone, M. Alioto, F. Crupi, L.-A. Ragnarsson, A. Hikavyy, B. Vincent, T. Chiarella, R. Loo, J. Tseng, S. Yamaguchi, S. Takeoka, W.-E. Wang, P. Absil, and T. Hoffmann IEEE International Electron Devices Meeting (IEDM 2010) 2010 IEEE San Francisco, CA, USA
8. G. Dewey, R. Kotlyar, R. Pillarisetty, T. Rakshit, H. Then, R. Chau, in: IEDM Tech. Dig., 2009, p. 487.
9. L.-A. Ragnarsson, J. Mitard S.-H. Hong, S. Takeoka, J. Tseng, W. Wang, S. Yamaguchi, L. Trojman, T. Kauerauf, A.D. Keersgieter, T. Schram, E. Rohr, N. Collaert, M. Jurczak, K. Bourdelle, B.-Y. Nguyen, P. Absil, T.Y. Hoffmann, in: International Symposium on VLSI Technology, Systems and Applications 2011, Hsinchu, Taiwan, p. 2.
10. C. Adelmann, T. Conard, A. Franquet, B. Brijs, F. Munnik, S. Burgess, T. Witters, J. Meersschaut, J.A. Kittl, W. Vandervorst, S. Van Elshocht, Surface and Interface Analysis, submitted for publication.
11. L.-A. Ragnarsson, D.P. Brunco, K. Yamamoto, Z. Tokei, A. Delabie, B. Parmentier, T. Conard, S. De Gendt, and M. Heyns J. Electrochem. Soc. 56 2009 H416 H423
12. E. San Andres, L. Pantisano, J. Ramos, P. Roussel, B. O'Sullivan, M. Toledano-Luque, S. DeGendt, and G. Groeseneken IEEE Trans. Electron Devices 54 2007 1705
13. J.R. Hauser, K. Ahmed, in: The 1998 International Conference on Characterization and Metrology for ULSI Technology, vol. 449, pp. 235-239.
14. S.I. Takagi, A. Toriumi, M. Iwase, and H. Tango IEEE Trans. Electron Devices 41 1994 2357 2362
15. S.I. Takagi, and M. Takayanagi Jpn. J. Appl. Phys. 41 2002 2348 2352 Part 1 (Regular Papers, Short Notes and Review Papers)
16. V. Iyengar, A. Kottantharayil, F. Tranjan, M. Jurczak, and K. De Meyer IEEE Trans. Electron Devices 54 2007 1177
17. J. Ramos, S. Severi, E. Augendre, C. Kerner, T. Chiarella, A. Nackaerts, T. Hoffmann, N. Collaert, M. Jurczak, S. Biesemans, in: ESSDERC 2006: Proceedings of the 36th European Solid-State Device Research Conference, Proceedings of the European Solid-State Device Research Conference, IEEE, 2006, pp. 363-366.
18. T. Ando, M.M. Frank, K. Choi, C. Choi, J. Bruley, M. Hopstaken, M. Copel, E. Cartier, A. Kerber, A. Callegari, D. Lacey, S. Brown, Q. Yang, and V. Narayanan IEDM Tech. Dig. 2009 2009 Baltimore MD, USA 394 397
19. A. Callegari, P. Jamison, E. Cartier, S. Zafar, E. Gusev, V. Narayanan, C. D'Emic, D. Lacey, F. Mc Feely, R. Jammy, M. Gribelyuk, J. Shepard, W. Andreoni, A. Curioni, and C. Pignedoli IEDM Tech. Dig. 2004 San Francisco CA, USA 825 828
20. M. Negara, K. Cherkaoui, P. Hurley, C. Young, P. Majhi, W. Tsai, D. Bauza, and G. Ghibaudo J. Appl. Phys. 105 2009 024510
21. S. Migita, Y. Morita, W. Mizubayashi, and H. Ota IEDM Tech. Dig 2010 San Francisco CA, USA
22. Y. Morita, S. Migita, W. Mizubayashi, H. Ota, in: International Worksho on Dielectric Thin Films IWDTF 2011, p. 23.
23. J. Huang, D. Heh, P. Sivasubramani, P. Kirsch, G. Bersuker, D. Gilmer, M. Quevedo-Lopez, M. Hussain, P. Majhi, P. Lysaght, H. Park, N. Goel, C. Young, C. Park, C. Park, M. Cruz, V. Diaz, P. Hung, J. Price, H.-H. Tseng, R. Jammy, in: 2009 Symposium on VLSI Technology, pp. 34-35.
24. K. Choi, H. Jagannathan, C. Choi, L. Edge, T. Ando, M. Frank, P. Jamison, M. Wang, E. Cartier, S. Zafar, J. Bruley, A. Kerber, B. Linder, A. Callegari, Q. Yang, S. Brown, J. Stathis, J. Iacoponi, V. Paruchuri, V. Narayanan, in: 2009 Symposium on VLSI Technology, pp. 138-139.
25. K. Akiyama, W. Wang, W. Mizubayashi, M. Ikeda, H. Ota, T. Nabatame, A. Toriumi, in: 2008 Symposium on VLSI Technology, Honolulu, HI, USA, pp. 80-81.
26. J. Tseng, L.-A. Ragnarsson, T. Schram, A. Akheyar, Y. Okuno, Z. Li, M. Aoulaiche, E. Rohr, T. Witters, C. Adelmann, A. Delabie, V. Paraschiv, C. Kerner, K. Xiong, M. Mueller, T. Hoffmann, P. Absil, and S. Biesemans 2010 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA 2010) 2010 IEEE Hsinchu, Taiwan 116 117
27. C. Lai, C. Lin, L. Cheng, C. Hsu, J. Tseng, T. Chiang, C. Chou, Y. Chen, C. Yu, S. Hsu, C. Chen, Z. Lee, J. Lin, C. Yang, G. Ma, S. Chien, in: 2009 IEEE International Electron Devices Meeting (IEDM 2009), Baltimore, MD, USA.
28. E. Cartier, M. Hopstaken, and M. Copel Appl. Phys. Lett. 95 2009 042901
29. E. Cartier, M. Steen, B. Linder, T. Ando, R. Iijima, M. Frank, J. Newbury, Y. Kim, F. McFeely, M. Copel, R. Haight, C. Choi, A. Callegari, V. Paruchuri, V. Narayanan, in: 2009 Symposium on VLSI Technology, Kyoto, Japan, pp. 42-43.
30. K. Xiong, J. Robertson, M. Gibson, and S. Clark Appl. Phys. Lett. 87 2005 1835051 1835053