Electronic defects in LaAlO3

Microelectronic Engineering

Volumn 85, Issue 1, 2008, Pages 65-69

  Xiong, K ^a   Robertson, J ^a   Clark, S J ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b DURHAM UNIVERSITY   (United Kingdom)

Author keywords

Calculation; Defects; Gate oxide; Trapping

Indexed keywords

CONDUCTION BANDS; DEFECTS; ELECTRON ENERGY LEVELS; ENERGY GAP; OXYGEN VACANCIES;

ELECTRONIC DEFECTS; GATE OXIDES; INTERSTITIAL DEFECTS;

LANTHANUM COMPOUNDS;

EID: 36148999800     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.181     Document Type: Article

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