Comprehensive study and control of oxygen vacancy induced effective work function modulation in gate-first high-k/metal inserted poly-Si stacks

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2010, Pages 179-180

  Hosoi, T ^a   Saeki, M ^a   Oku, Y ^a   Arimura, H ^a   Kitano, N ^a   Shiraishi, K ^b   Yamada, K ^c   Shimura, T ^a   Watanabe, H ^a  

^a OSAKA UNIVERSITY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON IMPURITIES; COMPREHENSIVE STUDIES; EFFECTIVE WORK FUNCTION; FERMI LEVEL PINNING; FORMATION KINETICS; GATE STACKS; IN-SITU; MIPS TECHNOLOGIES; POLY-SI; REDUCTANTS;

OXYGEN; PLASMA WAVES; POLYSILICON; WORK FUNCTION;

OXYGEN VACANCIES;

EID: 77957880622     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2010.5556218     Document Type: Conference Paper

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