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Volumn 98, Issue 12, 2011, Pages

Materials and electrical characterization of physical vapor deposited Lax Lu1-x Oinf3 thin films on 300 mm silicon

(10) Edge, L F a Vo, T a Paruchuri, V K a Iijima, R b Bruley, J c Jordan Sweet, J c Linder, B P c Kellock, A J d Tsunoda, T e Shinde, S R e

a IBM RESEARCH (United States)

b Toshiba America Inc (United States)

c IBM T J WATSON RESEARCH CENTER (United States)

d IBM ALMADEN RESEARCH CENTER (United States)

e Canon Anelva Corporation ^* (United States)

Author keywords

[No Author keywords available]

Indexed keywords

300-MM SILICON WAFERS; 300MM SILICON; COMPOSITION RANGES; DIELECTRIC CONSTANTS; FILM COMPOSITION; MATERIALS AND ELECTRICAL CHARACTERIZATION; PHYSICAL VAPOR DEPOSITED; PROCESS FLOWS; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SYNCHROTRON X RAY DIFFRACTION;

DEPOSITION; DIELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; PHYSICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

AMORPHOUS FILMS;

EID: 79953855293 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3562321 Document Type: Article

Times cited : (11)

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