Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process

IEEE Electron Device Letters

Volumn 26, Issue 4, 2005, Pages 237-239

  Kang, F J ^a   Yu, H Y ^b,c   Ren, C ^b   Wang, X P ^b   Li, M F ^b   Chan, D S H ^b   Yeo, Y C ^b   Sa, N ^a   Yang, H ^a   Liu, X Y ^a   Han, R Q ^a   Kwong, D L ^d  

^a PEKING UNIVERSITY   (China)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c IMEC   (Belgium)

^d UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

HfO2 gate dielectric; Instability of Vth; Mobility; nMOS transistor; Sub 1 nm equivalent oxide thickness (EOT)

Indexed keywords

DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; ELECTRON MOBILITY; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HIGH RESOLUTION ELECTRON MICROSCOPY; INTEGRATED CIRCUIT MANUFACTURE; RAPID THERMAL ANNEALING; RELIABILITY;

CONSTANT VOLTAGE STRESS; EQUIVALENT OXIDE THICKNESS (EOT); HAFNIUM DIOXIDE GATE DIELECTRIC;

MOSFET DEVICES;

EID: 20244379590     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.845496     Document Type: Article

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