Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties

Applied Physics Letters

Volumn 99, Issue 15, 2011, Pages

  Laha, Apurba ^a   Ai, B ^b   Babu, P R P ^a,c   Fissel, A ^a   Osten, H J ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b SUN YAT SEN UNIVERSITY   (China)

^c VIT UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ADVERSE EFFECT; CARBON DOPING; CARBON INCORPORATION; CURRENT BEHAVIORS; EXPERIMENTAL STUDIES; HIGHER TEMPERATURES; INDUCED DEFECTS; OXIDE LAYER; SI SUBSTRATES; STRUCTURAL QUALITIES;

EPITAXIAL FILMS; EPITAXIAL GROWTH; GADOLINIUM; OXYGEN VACANCIES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

ELECTRIC PROPERTIES;

EID: 80055009907     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3646104     Document Type: Article

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