Electrical properties of AlN xO y thin films prepared by reactive magnetron sputtering

Thin Solid Films

Volumn 520, Issue 21, 2012, Pages 6709-6717

  Borges, J ^a   Martin, N ^b   Barradas, N P ^c   Alves, E ^c   Eyidi, D ^d   Beaufort, M F ^d   Riviere, J P ^d   Vaz, F ^a   Marques, L ^a  

^a UNIVERSITY OF MINHO   (Portugal)

^b CNRS   (France)

^c INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^d UNIVERSITÉ DE POITIERS   (France)

Author keywords

Aluminum oxynitride; Electrical properties; Magnetron sputtering

Indexed keywords

ALN; ALUMINUM OXYNITRIDE; ALUMINUM TARGET; AMORPHOUS ALUMINUM OXIDE; ATOMIC RATIO; CONCENTRATION RATIO; DIRECT CURRENT MAGNETRON SPUTTERING; DISCHARGE CURRENTS; ELECTRICAL RESPONSE; FACE-CENTERED CUBIC; GRADUAL TRANSITION; GRAIN SIZE; HIGH ALUMINUM CONTENT; MORPHOLOGICAL EVOLUTION; NEGATIVE VALUES; NON-METALLIC; OXYNITRIDE FILMS; OXYNITRIDES; POLYCRYSTALLINE PHASE; REACTIVE GAS; REACTIVE GAS MIXTURES; REACTIVE MAGNETRON SPUTTERING; SMOOTH TRANSITIONS; STRUCTURAL CHARACTERIZATION; TEMPERATURE COEFFICIENT OF RESISTANCE;

ALUMINUM; ALUMINUM NITRIDE; AMORPHOUS MATERIALS; ARGON; FILM PREPARATION; MAGNETRON SPUTTERING; NITRIDES; OXIDE FILMS; SEMICONDUCTING FILMS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ELECTRIC PROPERTIES;

EID: 84864770187     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.06.062     Document Type: Article

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