Physical properties of polycrystalline aluminium nitride films deposited by magnetron sputtering

Diamond and Related Materials

Volumn 13, Issue 4-8, 2004, Pages 1120-1124

  Mortet, V ^a   Nesladek, M ^b   Haenen, K ^b   Morel, A ^c   D'Olieslaeger, M ^b   Vanecek, M ^a  

^a INSTITUTE OF PHYSICS   (Czech Republic)

^b HASSELT UNIVERSITY   (Belgium)

^c ARTS ET MÉTIERS PARISTECH   (France)

Author keywords

Aluminium nitride (AlN); Atomic force microscopy; Mechanical properties; Optical properties; Piezoelectric properties

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DEPOSITION; MAGNETRON SPUTTERING; PIEZOELECTRIC MATERIALS; THIN FILMS;

ELECTROMECHANICAL COUPLING; PIEZOELECTRIC COEFFICIENTS; PIEZOELECTRIC METHOD;

ALUMINUM NITRIDE;

DIAMOND;

EID: 2442509867     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2003.10.082     Document Type: Article

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