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Volumn 93, Issue 6, 2008, Pages
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The contribution of grain boundary barriers to the electrical conductivity of titanium oxide thin films
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Author keywords
[No Author keywords available]
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Indexed keywords
ARRHENIUS PLOTS;
ATOMIC PHYSICS;
ATOMS;
CONCENTRATION (PROCESS);
CRYSTAL GROWTH;
ELECTRIC CONDUCTIVITY;
ELECTRIC CONDUCTIVITY OF SOLIDS;
GRAIN (AGRICULTURAL PRODUCT);
GRAIN BOUNDARIES;
GRAIN SIZE AND SHAPE;
INJECTION (OIL WELLS);
MAGNETRON SPUTTERING;
NONMETALS;
OXIDE FILMS;
OXYGEN;
REACTIVE SPUTTERING;
SPUTTER DEPOSITION;
THICK FILMS;
THIN FILMS;
TITANIUM;
TITANIUM OXIDES;
ARRHENIUS;
ATOMIC RATIOS;
CONDUCTION MECHANISMS;
DEPOSITION PROCESSING;
ELECTRICAL CONDUCTIVITY;
GRAIN BARRIERS;
GRAIN-BOUNDARY BARRIERS;
GRAIN-BOUNDARY SCATTERING;
OXYGEN CONCENTRATIONS;
OXYGEN INJECTION;
REACTIVE GASES;
REACTIVE MAGNETRON SPUTTERING;
SOLID STATES;
TITANIUM OXIDE THIN FILMS;
TRANSPORT MODELLING;
GAS PERMEABLE MEMBRANES;
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EID: 49749103210
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2970034 Document Type: Article |
Times cited : (20)
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References (18)
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