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Surface and Coatings Technology

Volumn 196, Issue 1-3 SPEC. ISS., 2005, Pages 130-134

Electrical properties of AlN thin films prepared by ion beam enhanced deposition

(5) An, Zhenghua a,b Men, Chuanling b Xu, Zhengkui a Chu, Paul K a Lin, Chenglu b

a CITY UNIVERSITY OF HONG KONG (Hong Kong)

b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

Author keywords

Aluminum nitride (AlN); Electrical property; Ion beam enhanced deposition (IBED)

Indexed keywords

ALUMINUM NITRIDE; ANNEALING; CAPACITANCE; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; EVAPORATION; HEAT TREATMENT; ION BEAM ASSISTED DEPOSITION; LEAKAGE CURRENTS;

EVAPORATION RATES; INTERFACIAL STATES; ION BEAM ENHANCED DEPOSITION (IBED); TRAPPED CHARGES;

THIN FILMS;

ELECTROCOATING;

EID: 18144417749 PISSN: 02578972 EISSN: None Source Type: Journal
DOI: 10.1016/j.surfcoat.2004.08.169 Document Type: Article

Times cited : (31)

References (16)

1
- 0010728564
- M.O. Aboelfotoh R.S. Kern S. Tanaka R.F. Davis C.I. Harris Appl. Phys. Lett. 69 1996 2873
- (1996) Appl. Phys. Lett. , vol.69 , pp. 2873
- Aboelfotoh, M.O.¹ Kern, R.S.² Tanaka, S.³ Davis, R.F.⁴ Harris, C.I.⁵

2
- 36449007743
- K.S. Stevens M. Kinniburgh A.F. Schwartzman A. Ohtani R. Beresford Appl. Phys. Lett. 66 1995 3179
- (1995) Appl. Phys. Lett. , vol.66 , pp. 3179
- Stevens, K.S.¹ Kinniburgh, M.² Schwartzman, A.F.³ Ohtani, A.⁴ Beresford, R.⁵

3
- 0030206474
- S. Bengtsson M. Bergh M. Choumas C. Olesen K.O. Jeppson Jpn. J. Appl. Phys. 35 1996 4175
- (1996) Jpn. J. Appl. Phys. , vol.35 , pp. 4175
- Bengtsson, S.¹ Bergh, M.² Choumas, M.³ Olesen, C.⁴ Jeppson, K.O.⁵

4
- 0037202083
- C.L. Men Z. Xu Z.H. An P.K. Chu Q. Wan X.Y. Xie C.L. Lin Appl. Surf. Sci. 199 2002 287
- (2002) Appl. Surf. Sci. , vol.199 , pp. 287
- Men, C.L.¹ Xu, Z.² An, Z.H.³ Chu, P.K.⁴ Wan, Q.⁵ Xie, X.Y.⁶ Lin, C.L.⁷

5
- 0032630225
- R. Awadallah J.S. Yuan Int. J. Electron. 86 1999 707
- (1999) Int. J. Electron. , vol.86 , pp. 707
- Awadallah, R.¹ Yuan, J.S.²

6
- 0001610907
- X. Lu S.S.K. Iyer C.M. Hu N.W. Cheung J. Min Z.N. Fan P.K. Chu Appl. Phys. Lett. 71 1997 2767
- (1997) Appl. Phys. Lett. , vol.71 , pp. 2767
- Lu, X.¹ Iyer, S.S.K.² Hu, C.M.³ Cheung, N.W.⁴ Min, J.⁵ Fan, Z.N.⁶ Chu, P.K.⁷

7
- 0035269499
- I.C. Oliveira M. Massi S.G. Sanos C. Otani H.S. Maciel R.D. Mansano Diamond Relat. Mater. 10 2001 1317
- (2001) Diamond Relat. Mater. , vol.10 , pp. 1317
- Oliveira, I.C.¹ Massi, M.² Sanos, S.G.³ Otani, C.⁴ Maciel, H.S.⁵ Mansano, R.D.⁶

8
- 0033149167
- C.L. Aardahl J.W. Rogers Jr. H.K. Yun Y. Ono D.J. Tweet S.-T. Hsu Thin Solid Films 346 1999 174
- (1999) Thin Solid Films , vol.346 , pp. 174
- Aardahl, C.L.¹ Rogers Jr., J.W.² Yun, H.K.³ Ono, Y.⁴ Tweet, D.J.⁵ Hsu, S.-T.⁶

9
- 0035601294
- C.L. Men Z. Xu Z.H. Zheng X.Z. Duo M. Zhang C.L. Lin Chin. Phys. Lett. 18 2001 1282
- (2001) Chin. Phys. Lett. , vol.18 , pp. 1282
- Men, C.L.¹ Xu, Z.² Zheng, Z.H.³ Duo, X.Z.⁴ Zhang, M.⁵ Lin, C.L.⁶

10
- 0022115013
- K. Tsubouchi N. Mikoshiba IEEE Trans. Sonics Ultrason. 32 1985 634
- (1985) IEEE Trans. Sonics Ultrason. , vol.32 , pp. 634
- Tsubouchi, K.¹ Mikoshiba, N.²

11
- 0019584826
- E.V. Gerova N.A. Ivanov K.I. Kirov Thin Solid Films 81 1981 201
- (1981) Thin Solid Films , vol.81 , pp. 201
- Gerova, E.V.¹ Ivanov, N.A.² Kirov, K.I.³

12
- 0020799022
- A. Fathimulla A.A. Lakhani J. Appl. Phys. 54 1983 4586
- (1983) J. Appl. Phys. , vol.54 , pp. 4586
- Fathimulla, A.¹ Lakhani, A.A.²

13
- 0035873427
- T. Adam J. Kolodzey C.P. Swann M.W. Tsao J.F. Rabolt Appl. Surf. Sci. 175-176 2001 428
- (2001) Appl. Surf. Sci. , vol.175-176 , pp. 428
- Adam, T.¹ Kolodzey, J.² Swann, C.P.³ Tsao, M.W.⁴ Rabolt, J.F.⁵

14
- 0004005306
- Wiley-Interscience New York
- S.M. Sze Physics of Semiconductor Devices 1981 Wiley-Interscience New York 379
- (1981) Physics of Semiconductor Devices , pp. 379
- Sze, S.M.¹

15
- 0030401752
- M. Sakhaf M. Schmeits J. Appl. Phys. 80 1996 6839
- (1996) J. Appl. Phys. , vol.80 , pp. 6839
- Sakhaf, M.¹ Schmeits, M.²

16
- 0015420056
- W.G. Oldham S.S. Naik Solid-State Electron. 15 1972 1085
- (1972) Solid-State Electron. , vol.15 , pp. 1085
- Oldham, W.G.¹ Naik, S.S.²

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