Preparation of AlN thin films for film bulk acoustic resonator application by radio frequency sputtering

Journal of Zhejiang University: Science A

Volumn 10, Issue 3, 2009, Pages 464-470

  Li, Kan ^a   Jin, Hao ^a   Wang, De Miao ^a   Tang, Yi Fei ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Aluminum nitride (AlN); Film bulk acoustic resonator (FBAR); Piezoelectric thin film; Preferred orientation; Radio frequency (RF) reactive sputtering

Indexed keywords

ACOUSTIC RESONATORS; ACOUSTIC SURFACE WAVE FILTERS; ACOUSTICS; ALUMINA; ALUMINUM; ALUMINUM NITRIDE; CRYSTAL ORIENTATION; FULL WIDTH AT HALF MAXIMUM; HYSTERESIS; NITRIDES; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; RADIO; RADIO WAVES; RESONATORS; SEMICONDUCTOR MATERIALS; SUBSTRATES; TARGETS; THIN FILM DEVICES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ALN THIN FILMS; BOTTOM ELECTRODES; C-AXIS ORIENTATIONS; CATHODE VOLTAGES; CONCENTRATION OF; CONTROL METHODS; CRYSTALLINITY; FILM BULK ACOUSTIC RESONATOR (FBAR); GLASS SUBSTRATES; HIGH DEPOSITION RATES; HYSTERESIS EFFECTS; HYSTERESIS MODELS; OPTIMUM PROCESSING; PIEZOELECTRIC THIN FILM; PREFERRED ORIENTATION; RADIO FREQUENCY (RF) REACTIVE SPUTTERING; RADIO-FREQUENCY SPUTTERING; REACTIVE MAGNETRON SPUTTERING; RF-POWER; SPUTTERING SYSTEMS; STOICHIOMETRIC FILMS; SUBSTRATE TEMPERATURES; TARGET-SUBSTRATE DISTANCES; TRANSITION REGIONS; X-RAY DIFFRACTIONS;

FILM PREPARATION;

EID: 62349128906     PISSN: 1673565X     EISSN: 18621775     Source Type: Journal    
DOI: 10.1631/jzus.A0820572     Document Type: Article

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