Conduction, dielectric and interface properties of Al2O 3 films on GaAs deposited by the e-beam evaporation technique

Semiconductor Science and Technology

Volumn 24, Issue 9, 2009, Pages

  Bhan, R K ^a   Jain, Alok ^a   Kumar, Daljeet ^b   Mehta, S K ^a  

^a SOLID STATE PHYSICS LABORATORY   (India)

^b KURUKSHETRA UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE VALUES; CAPACITANCE VOLTAGE; CONDUCTION MECHANISM; CONSTANT CURRENT DENSITY; DIELECTRIC CONSTANTS; E BEAM EVAPORATION; ELECTRIC FIELD STRENGTH; FIXED CHARGE DENSITY; GAAS; INTERFACE PROPERTY; INTERFACE STATE DENSITY; RESISTIVITY VARIATION; SURFACE PASSIVATION; ZERO BIAS;

ELECTRIC FIELDS; EVAPORATION; GALLIUM ALLOYS; GALLIUM ARSENIDE; LEAKAGE CURRENTS; PASSIVATION; SEMICONDUCTING GALLIUM;

PERMITTIVITY;

EID: 77951589055     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/9/095017     Document Type: Article

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