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Volumn 483, Issue 1-2, 2005, Pages 16-20

Microscopic investigations of aluminum nitride thin films grown by low-temperature reactive sputtering

Author keywords

Aluminum nitride; Atomic force microscopy; Low temperature growth; Surface roughness

Indexed keywords

ACOUSTIC SURFACE WAVE DEVICES; ALUMINUM NITRIDE; CONCENTRATION (PROCESS); FILM GROWTH; LOW TEMPERATURE EFFECTS; MICROSCOPIC EXAMINATION; NITROGEN; SPUTTERING; SURFACE ROUGHNESS; THERMAL EFFECTS;

EID: 18844400282     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.12.014     Document Type: Article
Times cited : (24)

References (20)
  • 14
  • 15
    • 18844406702 scopus 로고    scopus 로고
    • International workshop on nitride semiconductors, Nagoya, Japan, September 24-27, 2000
    • Q.X. Guo, A. Okada, M. Nishio, H. Ogawa, and K. Fukui International workshop on nitride semiconductors, Nagoya, Japan, September 24-27, 2000 IPAP Conf. Series vol. 1 2000 651
    • (2000) IPAP Conf. Series , vol.1 , pp. 651
    • Guo, Q.X.1    Okada, A.2    Nishio, M.3    Ogawa, H.4    Fukui, K.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.