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Volumn 28, Issue 10, 2012, Pages 4672-4682

Wet chemical functionalization of III-V semiconductor surfaces: Alkylation of gallium arsenide and gallium nitride by a Grignard reaction sequence

Author keywords

[No Author keywords available]

Indexed keywords

ALKYL GROUPS; CHLORINE ACTIVATION; DIETHYL ETHERS; ELECTRONIC PASSIVATION; FUNCTIONALIZED; GAAS; GASPHASE; GRIGNARD REACTION; GRIGNARD REAGENT; HIGH RESOLUTION; II-IV SEMICONDUCTORS; OXIDE REMOVAL; PRE-TREATMENTS; RAMAN SIGNATURES; SCHOTTKY; SELECTIVE SURFACE; SPECTROSCOPIC EVIDENCE; SURFACE BONDS; SURFACE BOUNDS; SURFACE LAYERS; SURFACE OXIDATIONS; TERT BUTANOL; WET CHEMICALS; X-RAY PHOTOELECTRONS;

EID: 84858176834     PISSN: 07437463     EISSN: 15205827     Source Type: Journal    
DOI: 10.1021/la204698a     Document Type: Article
Times cited : (33)

References (92)
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    • Tadmor, R.1
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    • Fonash, S.1
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.