Molecular self-assembly at bare semiconductor surfaces: Characterization of a homologous series of n-alkanethiolate monolayers on GaAs(001)

ACS Nano

Volumn 1, Issue 1, 2007, Pages 30-49

  McGuiness, Christine L ^a   Blasini, Daniel ^b   Masejewski, John P ^a,c   Uppili, Sundararajan ^a,e   Cabarcos, Orlando M ^a   Smilgies, Detlef ^d   Allara, David L ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b Department of Molecular Biology and Genetics   (United States)

^c Department of Obstetrics Gynecology   (United States)

^d UNIVERSITY OF PITTSBURGH   (United States)

^e Conoco Phillips ^*  (United States)

Author keywords

Adsorbate ordering; Contact angle; GaAs(001); Grazing incidence X ray diffraction; Infrared spectroscopy; Self assembled monolayers; X ray photoelectron spectroscopy

Indexed keywords

ALKYL CHAIN; CHEMICAL PASSIVATION; GAAS(001); GRAZING INCIDENCE X-RAY DIFFRACTION; HOMOLOGOUS SERIES; INTERMOLECULAR FORCES; MOLECULAR SELF ASSEMBLY; MOSAIC STRUCTURE; NANOSCALE STRUCTURE; NEAREST NEIGHBOR DISTANCE; ORDERED STRUCTURES; PSEUDO-HCP; SAM FORMATION; SAMS; SEMI-CONDUCTOR SURFACES; SQUARE LATTICES; STEP EDGE; STRUCTURAL TRENDS; TILT ANGLE; TWO CHAINS;

CHEMICAL BONDS; CONTACT ANGLE; DIFFRACTION; GALLIUM ALLOYS; GALLIUM ARSENIDE; INFRARED SPECTROSCOPY; OPTICS; PASSIVATION; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING GALLIUM; SURFACE PROPERTIES; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

SELF ASSEMBLED MONOLAYERS;

EID: 38849090742     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn7000596     Document Type: Article

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