Gas phase formation of dense alkanethiol layers on GaAs(110)

Journal of the American Chemical Society

Volumn 129, Issue 25, 2007, Pages 7807-7813

  Rodríguez, Luis M ^a   Gayone, J Esteban ^a   Sánchez, Esteban A ^a   Grizzi, Oscar ^a   Blum, Barbara ^b   Salvarezza, Roberto C ^b   Xi, Luan ^c   Woon, Ming Lau ^c  

^a UNC and CONICET ^*  (Argentina)

^b INSTITUTO DE INVESTIGACIONES FISICOQUÍMICAS TEÓRICAS Y APLICADAS INIFTA   (Argentina)

^c UNIVERSITY OF WESTERN ONTARIO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; FILM GROWTH; PARAFFINS; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTING GALLIUM ARSENIDE; THERMODYNAMIC STABILITY;

ADSORPTION KINETICS; DIRECT RECOIL SPECTROSCOPY; HEXANETHIOL; SEMICONDUCTOR SURFACES;

THIN FILMS;

ALKANE DERIVATIVE; ARSENIC DERIVATIVE; CARBON; GALLIUM; SULFUR; THIOL;

ADSORPTION KINETICS; ARTICLE; CHEMICAL BOND; DESORPTION; FILM; GAS; SEMICONDUCTOR; THERMOSTABILITY;

EID: 34347214726     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja069007s     Document Type: Article

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