Gas phase formation of dense alkanethiol layers on GaAs(110)

Journal of the American Chemical Society

Volumn 129, Issue 25, 2007, Pages 7807-7813

  Rodríguez, Luis M ^a   Gayone, J Esteban ^a   Sánchez, Esteban A ^a   Grizzi, Oscar ^a   Blum, Barbara ^b   Salvarezza, Roberto C ^b   Xi, Luan ^c   Woon, Ming Lau ^c  

^a Universidad Nacional de Río Cuarto Consejo Nacional de Investigaciones Científicas y Técnicas   (Argentina)

^b INSTITUTO DE INVESTIGACIONES FISICOQUÍMICAS TEÓRICAS Y APLICADAS INIFTA   (Argentina)

^c UNIVERSITY OF WESTERN ONTARIO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; FILM GROWTH; PARAFFINS; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTING GALLIUM ARSENIDE; THERMODYNAMIC STABILITY;

ADSORPTION KINETICS; DIRECT RECOIL SPECTROSCOPY; HEXANETHIOL; SEMICONDUCTOR SURFACES;

THIN FILMS;

ALKANE DERIVATIVE; ARSENIC DERIVATIVE; CARBON; GALLIUM; SULFUR; THIOL;

ADSORPTION KINETICS; ARTICLE; CHEMICAL BOND; DESORPTION; FILM; GAS; SEMICONDUCTOR; THERMOSTABILITY;

EID: 34347214726     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja069007s     Document Type: Article

References (27)

1. McGuiness, C. L.; Shaporenko, A.; Mars, C. K.; Uppili, S.; Zharnikov, M.; Allara, D. L. J. Am. Chem. Soc. 2006, 128, 5231.
2. Ding, X.; Moumanis, K.; Dubowski, J. J.; Tay, L.; Rowell, N. L. J. Appl. Phys. 2006, 99, 054701.
3. Schvartzman, M.; Sidorov, V.; Ritter, D.; Paz, Y. Semicond. Sci. Technol. 2001, 16, L68.
4. Ivanisevic, A.; Mirkin, C. A. J. Am. Chem. Soc. 2001, 123, 7887.
5. Xia, Y.; Zhao, X.-M.; Whitesides, G. M. Microelectron. Eng. 1996, 32, 255.
6. Zerulla, D.; Chassé, T. Langmuir 2002, 18, 5392-5399.
7. Camillone, N., III; Kahn, K. A.; Osgood, R. M., Jr. Surf. Sci. 2000, 453, 83.
8. Donev, S.; Brack, N.; Paris, N. J.; Pigram, P. J.; Singh, N. K.; Usher, B. Langmuir 2005, 21, 1866.
9. Singh, N. K.; Doran, D. C. Surf. Sci. 1999, 422, 50.
10. Rabalais, J. W. Principles and Applications of Ion Scattering Spectrometry, Surface Chemical and Structural Analysis; Wiley Interscience: New York, 2003.
11. Kim, S. S.; Kim, Y.; Kim, H. I.; Lee, S. H.; Lee, T. R.; Perry, S. S.; Rabalais, J. W. J. Chem. Phys. 1998, 109, 9574.
12. Houssiau, L.; Graupe, M.; Colorado, R., Jr.; Kim, H. I.; Lee, T. R.; Perry, S. S.; Rabalais, J. W. J. Chem. Phys. 1998, 109, 9134.
13. Rodríguez, L. M.; Gayone, J. E.; Sánchez, E. A.; Grizzi, O.; Blum, B.; Salvarezza, R. C. J. Phys. Chem. B 2006, 110, 7095.
14. Rodríguez, L. M.; Gayone, E. J.; Sánchez, E. A.; Ascolani, H.; Grizzi, O.; Sánchez, M.; Blum, B.; Benitez, G.; Salvarezza, R. C. Surf. Sci. 2006, 600, 2305-2316.
15. Gayone, J. E.; Pregliasco, R. G.; Gómez, G. R.; Sánchez, E. A.; Grizzi, O. Phys. Rev. B 1997, 56, 4186.
16. Gayone, J. E.; Sánchez, E. A.; Grizzi, O.; Passeggi, M. C. G., Jr.; Vidal, R.; Ferrón, J. Surf. Sci. 2002, 519, 269.
17. Kondoh, H.; Kodama, C.; Sumida, H.; Nozoye, H. J. Chem. Phys. 1999, 111, 1175.
18. Schreiber, F.; et al. Phys. Rev. B 1998, 57, 12476.
19. Poirier, G. E.; Pylant, E. D. Science 1996, 272, 1145.
20. Poirier, G. E.; Fitts, W. P.; White, J. M. Langmuir 2001, 17, 1176.
21. Rzeznicka, I. I.; Lee, J.; Maksymovych, P.; Yates, J. T., Jr. J. Phys. Chem. B 2005, 109, 15992.
22. Vericat, C.; Vela, M. E.; Salvarezza, R. C. Phys. Chem. Chem. Phys. 2005, 7, 3258.
23. http://www.princeton.edu/~gscoles/theses/sean/chapter4.html. Wetterer, S. M. Ph.D. Dissertation, Princeton University, 1998, Chapter 4.
24. Lavrich, D. J.; Wetterer, S. M.; Bernasek, S. L.; Scoles, G. J. Phys. Chem. B 1998, 102, 3456.
25. Necher, G.; Vilan, A.; Cohen, H.; Cahen, D.; Amy, F.; Chan, C.; Hwang, J.; Kahn, A. J. Phys. Chem. B 2006, 110, 14363.
26. Jun, Y.; Zhu, X.-Y.; Hsu, J. W. P. Langmuir 2006, 22, 3627.
27. Israelachvili, J. N. Intramolecular and Surface Forces; Academia Press: London, 1994; pp 353 and 408.