Novel dielectrics for gate oxides and surface passivation on GaN

Solid-State Electronics

Volumn 50, Issue 6, 2006, Pages 1016-1023

  Gila, B P ^a   Thaler, G T ^a   Onstine, A H ^a   Hlad, M ^a   Gerger, A ^a   Herrero, A ^a   Allums, K K ^a   Stodilka, D ^a   Jang, S ^b   Kang, B ^b   Anderson, T ^b   Abernathy, C R ^a   Ren, F ^b   Pearton, S J ^a  

^a UNIVERSITY OF FLORIDA   (United States)

^b University of Florida   (United States)

Author keywords

GaN; HEMTs; Passivation

Indexed keywords

CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; DIELECTRIC FILMS; DIELECTRIC MATERIALS; HIGH ELECTRON MOBILITY TRANSISTORS; MAGNESIA; MAGNESIUM PRINTING PLATES; PASSIVATION; SCANDIUM; THIN FILMS;

GATE OXIDES; LOW INTERFACE STATE DENSITIES; NON-PASSIVATED SAMPLES; OXIDE/NITRIDE INTERFACIAL STABILITY;

GALLIUM NITRIDE;

EID: 33745763866     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.04.001     Document Type: Article

References (34)

1. Kohn E., Daumiller I., Schmid P., Nguyen N.X., and Nguyen C.N. Electron Lett 35 (1999) 1022
2. Pearton S.J., Ren F., Zhang A.P., and Lee K.P. Mater Sci Eng R 30 (2000) 55
3. Green B.M., Chu K.K., Chumbes E.M., Smart J.A., Shealy J.R., and Eastman L.F. IEEE Electron Dev Lett 21 (2000) 268
4. Simin G., Hu X., Ilinskaya N., Kumar A., Koudymov A., Zhang J., et al. Electron Lett 36 (2000) 2043
5. Daumiller I., Theron D., Gaquiere C., Vescan A., Dietrich R., Wieszt A., et al. IEEE Electron Dev Lett 22 (2001) 62
6. Klein P.B., Binari S.C., Ikossi K., Wickenden A.E., Koleske D.D., and Henry R.L. Appl Phys Lett 79 (2001) 3527
7. Binari S.C., Ikossi K., Roussos J.A., Kruppa W., Park D., Dietrich H.B., et al. IEEE Trans Electron Dev 48 (2001) 465
8. Eastman L.F., Tilak V., Smart J., Green B.M., Chumbes E.M., Dimitrov R., et al. IEEE Trans Electron Dev 48 (2001) 479
9. Luo B., Johnson J.W., Kim J., Mehandru R.M., Ren F., Gila B.P., et al. Appl Phys Lett 80 9 (2002) 1661
10. Vertiatchik A., Eastman L.F., Schaff W.J., and Prunty T. Electron Lett 38 (2002) 388
11. Khan M.A., et al. IEEE Electron Dev Lett 21 (2000) 63
12. Khan M.A., et al. Appl Phys Lett 77 (2000) 1339
13. Luo B., Johnson J.W., Gila B.P., Onstine A., Abernathy C.R., Ren F., et al. Solid State Electron 46 (2002) 467
14. Luo B., Mehandru R., Kim J., Ren F., Gila B.P., Onstine A.H., et al. J Electrochem Soc 149 (2002) G613
15. Luo B., Mehandru R.M., Kim J., Ren F., Gila B.P., Abernathy C.R., et al. Solid State Electron 46 (2002) 2185
16. Vetury R., and Zhang N.W. IEEE Trans Electron Dev 48 (2001) 416
17. Binari S.C., Doverspike K., Kelner G., Dietrich H.B., and Wickenden A.E. Solid State Electron 41 (1997) 177
18. Kim H., Park S.-J., and Hwang H. J Vac Sci Technol B 19 (2001) 579
19. Gillespie J.K., Fitch R.C., Sewell J., Dettmer R., Via G.D., Crespo A., et al. IEEE Electron Dev Lett 23 (2002) 505
20. Mehandru R., Luo B., Kim J., Ren F., Gila B.P., Onstine A.H., et al. Appl Phys Lett 82 15 (2003) 2530
21. Kim J., Mehandru R., Luo B., Ren F., Gila B.P., Onstine A.H., et al. Appl Phys Lett 80 (2002) 4555
22. Machuca F., Liu Z., Sun Y., Pianetta P., Spicer W.E., and Pease R.F.W. J Vac Sci Technol A 20 5 (2002) 1784
23. Shalish I., Shapira Y., Burstein L., and Salzman J. J Appl Phys 89 1 (2001) 390
24. Lee K.N., Donovan S.M., Gila B., Overberg M., MacKenzie J.D., Abernathy C.R., et al. J Electrochem Soc 147 (2000) 3087
25. Gila B.P., Ren F., and Abernathy C.R. Mat Sci Eng R Rep 44 (2004) 151
26. Bermudez V.M., Koleske D.D., and Wickenden A.E. Appl Sur Sci 126 (1998) 69
27. Prabhakaran K., Andersson T.G., and Nozawa K. Appl Phys Lett 69 (1996) 3212
28. Gila B.P., Johnson J.W., Mehandru R., Luo B., Onstine A.H., Allums K.K., et al. Phys Stat Sol 188 (2001) 239
29. Gila B.P., Onstine A.H., Kim J., Allums K.K., Ren F., Abernathy C.R., et al. J Vac Sci Technol B 21 (2003) 2368
30. Kuroda Y., Yasugi E., Aoi H., Miura K., and Morimoto T. J Chem Soc Faraday Trans 84 7 (1988) 2421-2430
31. Refson J., Wogelius M., Fraser H., Payne J.T., Lee B., and Milman D. Phys Rev B 52 (1995) 4590
32. Dang X.Z., Yu E.T., Piner E.J., and McDermott B.T. J Appl Phys 90 (2001) 1357
33. Bernat J., Javorka P., Marso M., and Kordos P. Appl Phys Lett 83 (2003) 5455
34. Gila B.P., Hlad M., Onstine A.H., Frazier R., Thaler G.T., Herrero A., et al. Appl Phys Lett 87 (2005) 163503