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Volumn 6, Issue 12, 2006, Pages 2873-2876

How important Is the interfacial chemical bond for electron transport through alkyl chain monolayers?

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; SCHOTTKY BARRIER DIODES;

EID: 33846380283     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl062089y     Document Type: Article
Times cited : (69)

References (34)
  • 9
    • 0345979435 scopus 로고    scopus 로고
    • Ulman, A. Chem. Rev. 1996, 1996, 1533-1554.
    • (1996) Chem. Rev , vol.1996 , pp. 1533-1554
    • Ulman, A.1
  • 26
    • 33846384584 scopus 로고    scopus 로고
    • The rectification ratio is defined as the ratio of J measured at a positive bias divided by that measured at the corresponding negative bias
    • The rectification ratio is defined as the ratio of J measured at a positive bias divided by that measured at the corresponding negative bias.
  • 27
    • 33846341724 scopus 로고    scopus 로고
    • We define as positive a dipole whose positive pole is the one closest to the semiconductor surface
    • We define as positive a dipole whose positive pole is the one closest to the semiconductor surface.
  • 30
    • 33846377116 scopus 로고    scopus 로고
    • We chose to measure C14 and not a shorter one. because this molecular length is known to form a well-organized monolayer
    • We chose to measure C14 and not a shorter one. because this molecular length is known to form a well-organized monolayer.
  • 31
    • 33846359910 scopus 로고    scopus 로고
    • At high forward bias band bending in n-Si becomes negligible
    • At high forward bias band bending in n-Si becomes negligible.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.