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Volumn 133, Issue 1-2, 1998, Pages 17-22
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Electronic properties of GaAs(100) surface passivated in alcoholic sulfide solutions
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Author keywords
GaAs; Sulfur treatment; Surface Fermi level
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Indexed keywords
AMMONIUM COMPOUNDS;
BAND STRUCTURE;
COMPOSITION EFFECTS;
ELECTRONIC PROPERTIES;
FERMI LEVEL;
IONIZATION OF SOLIDS;
PASSIVATION;
PERMITTIVITY;
RAMAN SPECTROSCOPY;
SOLVENTS;
SULFUR COMPOUNDS;
SURFACE TREATMENT;
AMMONIUM SULFIDE;
KELVIN PROBE METHOD;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0031653137
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(98)00189-5 Document Type: Article |
Times cited : (31)
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References (24)
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