Studies of oxide desorption from GaAs substrates via Ga2O 3 to Ga2O conversion by exposure to Ga flux

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1534-1538

  Wasilewski, Z R ^a   Baribeau, J M ^a   Beaulieu, M ^a   Wu, X ^a   Sproule, G I ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CONTAMINATION; DEGRADATION; DROP BREAKUP; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OXIDES; OXYGEN; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON COMPOUNDS; SURFACE ROUGHNESS;

OXIDE DESORPTION; OXIDE REMOVAL; SUBSTRATE ROUGHNESS; VOLATILE SPECIES;

DESORPTION;

EID: 3242696142     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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