Chemical functionalization of GaN and AlN surfaces

Applied Physics Letters

Volumn 87, Issue 26, 2005, Pages 1-3

  Baur, B ^a   Steinhoff, G ^a   Hernando, J ^a   Purrucker, O ^b   Tanaka, M ^b   Nickel, B ^c   Stutzmann, M ^a   Eickhoff, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; DESORPTION; ENTHALPY; MICROSCOPIC EXAMINATION; MONOLAYERS; ORGANIC ACIDS; SELF ASSEMBLY; TEMPERATURE PROGRAMMED DESORPTION; X RAY PHOTOELECTRON SPECTROSCOPY;

MONOLAYER THICKNESS; OCTADECYLTRIMETHOXYSILANE; ORGANOSILANES;

GALLIUM NITRIDE;

EID: 29744443534     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2150280     Document Type: Article

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