Reactive ion etching of GaN layers using SF6

Semiconductor Science and Technology

Volumn 12, Issue 12, 1997, Pages 1654-1657

  Basak, D ^a   Verdu M ^b   Montojo, M T ^b   Sanchez Garcia M A ^a   Sanchez F J ^a   Munoz E ^a   Calleja, E ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b Ctro Invest y Desarrollo la Armada   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001114976     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/12/019     Document Type: Article

References (18)

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