Formation of alkanethiol and alkanedithiol monolayers on GaAs(001)

Langmuir

Volumn 22, Issue 8, 2006, Pages 3627-3632

  Jun, Yongseok ^a   Zhu, X Y ^a   Hsu, Julia W P ^b  

^a University of Minnesota   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

1,8-OCTANEDITHIOL MONOLAYER; ALKANEDITHIOL MONOLAYERS; ALKANETHIOL;

ALCOHOLS; SEMICONDUCTING GALLIUM ARSENIDE; SULFUR COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

MONOLAYERS;

EID: 33646338459     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la052473v     Document Type: Article

References (49)

1. For example, see: (a) Laibinis, P. E.; Whitesides, G. M.; Allara, D. L.; Tao, Y.-T.; Parikh, A. N.; Nuzzo, R. G. J. Am. Chem. Soc. 1991, 113, 7152.
2. (b) Ulman, A. Chem. Rev. 1996, 96, 1533.
3. Adlkofer, K.; Shaporenko, A.; Zharnikov, M.; Grunze, M.; Ulman, A.; Tanaka, M. J. Phys. Chem. B 2003, 107, 11737.
4. (a) Lunt, S. R.; Santangelo, P. G.; Lewis, N. S. J. Vac. Sci. Technol., B 1991, 9, 2333.
5. (b) Dorsten, J. F.; Maslar, J. E.; Bohn, P. W. Appl. Phys. Lett. 1995, 66, 1755.
6. (c) Hou, T.; Greenlief, C. M.; Keller, S. W.; Nelen, L.; Kauffman, J. F. Chem. Mater. 1997, 9, 3181.
7. Vilan, A.; Shanzer, A.; Cahen, D. Nature 2000, 404, 166.
8. Lodha, S.; Janes, D. B. Appl. Phys. Lett. 2004, 85, 2809.
9. Hsu, J. W. P.; Lang, D. V.; West, K. W.; Loo, Y.-L.; Halls, M. D.; Raghavachari, K. J. Phys. Chem. B 2005, 109, 5719.
10. Haick, H.; Ambrico, M.; Ligonzo, T.; Cahen, D. Adv. Mater. 2004, 16, 2145.
11. Li, W.-J.; Kavanagh, K. L.; Matzke, C. M.; Talin, A. A.; Leonard, F.; Faleev, S.; Hsu, J. W. P. J. Phys. Chem. B 2005, 109, 6252.
12. Sheen, C. W.; Shi, J.-X.; Martensson, J.; Parikh, A. N.; Allara, D. L. J. Am. Chem. Soc. 1992, 114, 1514.
13. Baum, T.; Ye, S.; Uosaki, K. Langmuir 1999, 15, 8577.
14. Ye, S.; Li, O.; Noda, H.; Uosaki, K.; Osawa, M. Surf. Sci. 2003, 529, 163.
15. Tour, J. M.; Jones, L., II; Pearson, D. L.; Lamba, J. J. S.; Burgin, T. P.; Whitesides, G. M.; Allara, D. L.; Parikh, A. N.; Atre, S. V. J. Am. Chem. Soc. 1995, 117, 9529.
16. (a) Kushmerick, J. G.; Holt, D. B.; Yang, J. C.; Naciri, J.; Moore, M. H.; Shashidhar, R. Phys. Rev. Lett. 2002, 89, 086802.
17. (b) Engelkes, V. B.; Beebe, J. M.; Frisbie, C. D. J. Am. Chem. Soc. 2004, 126, 14287.
18. (c) Cui, X. D.; Primak, A.; Zarate, X.; Tomfohr, J.; Sankey, O. F.; Moore, A. L.; Moore, T. A.; Gust, D.; Nagahara, L. A.; Lindsay, S. M. J. Phys. Chem. B 2002, 106, 8609.
19. Loo, Y.-L.; Hsu, J. W. P.; Willett, R. L.; Baldwin, K. W.; West, K. W.; Rogers, J. A. J. Vac. Sci. Technol., B 2002, 20, 2853.
20. (a) Brust, M.; Blass, P. M.; Bard, A. J. Langmuir 1997, 13, 5602.
21. (b) Deng, W.; Yang, L.; Fujita, D.; Nejoh, H.; Bai, C. Appl. Phys. A 2001, 71, 639.
22. For example, see: (a) Leung, T. Y. B.; Gerstenberg, M. C.; Lavrich, D. J.; Scoles, G.; Schreiber, F.; Poirier, G. E. Langmuir 2000, 16, 549.
23. (b) Kobayashi, K.; Horiuchi, T.; Yamada, H.; Matsushige, K. Thin Solid Films 1998, 331, 210.
24. (c) Duwez, A.-S.; Di Paolo, S.; Ghijsen, J.; Riga, J.; Deleuze, M.; Delhalle, J. J. Phys. Chem. B 1997, 101, 884.
25. For example, see: (a) Esplandiu, M. J.; Noeske, P.-L. M. Appl. Surf. Sci. 2002, 199, 166.
26. (b) Rieley, H.; Kendall, G. K.; Zemicael, F. W.; Smith, T. L.; Yang, S. Langmuir 1993, 9, 5147.
27. (c) Azzam, W.; Wehner, B. I.; Fischer, R. A.; Terfort, A.; Woll, C. Langmuir 2002, 18, 7166.
28. (d) Yang, J.-S.; Lee, C.-C.; Yau, S.-L.; Chang, C.-C.; Lee, C.-C.; Leu, J.-M. J. Org. Chem. 2000, 65, 871.
29. Krapchetov, D. A.; Ma, H.; Jen, A. K. Y.; Fischer, D. A.; Loo, Y.-L. Langmuir 2005, 21, 5887.
30. Porter, M. D.; Bright, T. B.; Allara, D. L.; Chidsey, C. E. D. J. Am. Chem. Soc. 1987, 109, 3559.
31. Bain, C. D.; Troughton, E. B.; Tao, Y.-T.; Evall, J.; Whitesides, G. M.; Nuzzo, R. G. J. Am. Chem. Soc. 1989. 111, 321.
32. (a) Briggs, D.; Seah, M. P. Practical Surface Analysis: John Wiley & Sons Press: Chichester, England, 1990; Vol. 1.
33. (b) Bain, C. D.; Whitesides, G. M. J. Phys. Chem. 1989, 93, 1670.
34. A nonlinear least-squares fitting procedure, with a mixed Gaussian-Lorenzian line shape and Shirley background subtracted, was used to analyze the peaks.
35. Fuxen, C.; Azzam, W.; Arnold, R. Witte, G.; Terfort, A.; Woll, C. Lungmuir 2001, 17, 3689.
36. Zavadil, K. R.; Ashby, C. I. H.; Howard, A. J.; Hammons, B. E. J. Vac. Sci. Technol., A 1994, 12, 1045.
37. Zhang, Q.; Huang, H.; He, H., Chen, H.; Shao, H.; Liu, Z. Surf. Sci. 1999, 440, 142.
38. We have used the C attenuation length (36 Å) in this calculation, i.e., assuming the terminal C-S has the same attenuation strength as C-C.
39. Nuzzo, R. G.; Zegarski, B. R.; Dubois, L. H. J. Am. Chem. Soc. 1987, 109, 733.
40. Hill, C. G. An Introduction to Chemical Engineering Kinetics & Reactor Design; John Wiley & Sons: New York, 1977; Chapter 6.
41. (a) Lavrich, D. J.; Wetterer, S. M.; Bernasek, S. L.; Scoles, G. J. Phys. Chem. B 1998, 102, 3456.
42. (b) Schreiber, F.; Eberhardt, A.; Leiung, T. Y. B.; Schwanz, P.; Wetterer, S. M.; Lavrich, D. J.; Berman, L.; Fenter, P.; Eisenberger, P.; Scoles, G. Phys. Rev. B 1998, 57, 12476.
43. Schwartz, D. K. Annu. Rev. Phys. Chem. 2001, 52, 107.
44. -1 for C18MT adsorption on Au using the same analysis outlined in section III.D.
45. For example, see: (a) Poirier, G. E. Chem. Rev. 1997, 97, 1117.
46. (b) McCarley, R. L.; Dunaway, D. J.; Willicut, R. J. Langmuir 1993, 9, 2775.
47. (c) McDermott, C. A.; McDermott, M. T.; Green, J.-B.; Porter, M. D. J. Phys. Chem. 1995, 99, 13257.
48. Major, R. C.; Zhu, X.-Y. Langmuir 2001, 17, 5576.
49. Jung, L. S.; Campbell, C. T. Phys. Rev. Lett. 2000, 84, 5164.