Energy level and band alignment for GaAs - Alkylthiol monolayer - Hg junctions from electrical transport and photoemission experiments

Journal of Physical Chemistry B

Volumn 110, Issue 29, 2006, Pages 14363-14371

  Neshar, Guy ^a   Vilan, Ayelet ^a   Cohen, Hagai ^a   Cahen, David ^a   Amy, Fabrice ^b   Chan, Calvin ^b   Hwang, Jaehyung ^b   Kahn, Antoine ^b  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; FERMI LEVEL; MERCURY (METAL); MONOLAYERS; PHOTOEMISSION; SPECTROSCOPIC ANALYSIS; THERMIONIC EMISSION;

ALKYLTHIOL MONOLAYER; BAND ALIGNMENT; ELECTRONIC TRANSPORT; PHOTOEMISSION SPECTROSCOPY;

GALLIUM ALLOYS;

EID: 33746912736     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp062181i     Document Type: Article

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