Molecular control over semiconductor surface electronic properties: Dicarboxylic acids on CdT'e, CdsE, GaAs, and InP

Journal of the American Chemical Society

Volumn 121, Issue 45, 1999, Pages 10545-10553

  Cohen, R ^a   Kronik, L ^a   Shanzer, A ^a   Cahen, David ^a   Liu, A ^b   Rosenwaks, Y ^b   Lorenz, J K ^c   Ellis, A B ^c  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b TEL AVIV UNIVERSITY   (Israel)

^c UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASTATINE; CADMIUM DERIVATIVE; DICARBOXYLIC ACID; GALLIUM; INDIUM; PHOSPHORUS DERIVATIVE; SELENIUM DERIVATIVE; TECHNETIUM DERIVATIVE;

ARTICLE; ELECTRIC POTENTIAL; ELECTRONICS; LUMINESCENCE; MOLECULAR INTERACTION; MOLECULAR MODEL; POTENTIAL DIFFERENCE; SEMICONDUCTOR; SURFACE PROPERTY;

EID: 0033579113     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja9906150     Document Type: Article

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50. Since the experiments in this work where done in the ambient, formation of surface oxides was unavoidable. Thus, the surface states here are of the bare semiconductor/oxide system before molecule adsorption.