Wet chemical functionalization of III-V semiconductor surfaces: Alkylation of gallium phosphide using a Grignard reaction sequence

Langmuir

Volumn 26, Issue 13, 2010, Pages 10890-10896

  Mukherjee, Jhindan ^a   Peczonczyk, Sabrina ^a   Maldonado, Stephen ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADVENTITIOUS CARBON; AFTER-TREATMENT; ALKYL GROUPS; AMBIENT AIR; CL SURFACE; CONTINUOUS EXPOSURE; CURRENT-VOLTAGE RESPONSE; DENSE LAYER; FUNCTIONALIZED; GASPHASE; GRIGNARD REACTION; GRIGNARD REAGENT; HIGH RESOLUTION; II-IV SEMICONDUCTORS; INTERFACIAL PROPERTY; LIMIT OF DETECTION; LONG ALKYL CHAINS; MACRO SCALE; METAL-INSULATOR SEMICONDUCTOR DEVICES; PRE-TREATMENTS; REACTION STRATEGIES; SCHOTTKY; SINGLE-CRYSTALLINE; SURFACE MODIFICATION; SURFACE OXIDATIONS; SURFACE OXIDE; SYNTHETIC METHODOLOGY; WET CHEMICALS; WETTING PROPERTY; X-RAY PHOTOELECTRONS;

ALKYLATION; ANGLE MEASUREMENT; BINDING ENERGY; CHARGE TRANSFER; CONTACT ANGLE; GALLIUM PHOSPHIDE; HETEROJUNCTIONS; HYDROCARBONS; ION EXCHANGE; MERCURY (METAL); METAL INSULATOR BOUNDARIES; MIM DEVICES; MIS DEVICES; MONOLAYERS; PHOTOELECTRON SPECTROSCOPY; REACTION RATES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; WETTING;

GALLIUM ALLOYS;

EID: 77954269938     PISSN: 07437463     EISSN: 15205827     Source Type: Journal    
DOI: 10.1021/la100783w     Document Type: Article

References (60)

1. Price, M. J. and Maldonado, S. J. Phys. Chem. C 2009, 113, 11988
2. Tomkiewicz, M. and Woodall, J. M. Science 1977, 196, 990
3. Semiconductor Electrodes; Finklea, H. O., Ed.; Elsevier: Amsterdam, 1984.
4. Gorton, H. C., Swartz, J. M., and Peet, C. S. Nature 1960, 188, 303
5. Gershenzon, M. and Mikulyak, R. M. J. Appl. Phys. 1961, 32, 1338
6. Grimmeiss, H. G., Rabenau, A., and Koelmans, H. J. Appl. Phys. 1961, 32, 2123
7. Gerischer, H. J. Electroanal. Chem. 1975, 58, 263
8. Tributsch, H. and Gerischer, H. Ber. Bunsen-Ges. 1969, 73, 850
9. Aspnes, D. E. and Studna, A. A. Phys. Rev. B 1983, 27, 985
10. Gerischer, H. J. Vac. Sci. Technol. 1978, 15, 1422
11. Khaselev, O. and Turner, J. A. J. Electrochem. Soc. 1998, 145, 3335
12. Gershenzon, M. and Mikulyak, R. M. Appl. Phys. Lett. 1966, 8, 245
13. Stringfellow, G. B. J. Vac. Sci. Technol. 1976, 13, 908
14. Lunt, S. R., Ryba, G. N., Santangelo, P. G., and Lewis, N. S. J. Appl. Phys. 1991, 70, 7449
15. Valtiner, M., Borodin, S., and Grundmeier, G. Langmuir 2008, 24, 5350
16. Mukherjee, J., Erickson, B., and Maldonado, S. J. Electrochem. Soc. 2010, 157, H487
17. Flores-Perez, R., Zemlyanov, D. Y., and Ivanisevic, A. J. Phys. Chem. C 2008, 112, 2147
18. Richards, D., Zemlyanov, D., and Ivanisevic, A. Langmuir, published online Feb 3, 2010, http://dx.doi.org/10.1021/la904451x.
19. Suzuki, Y., Sanada, N., Shimomura, M., and Fukuda, Y. Appl. Surf. Sci. 2004, 235, 260
20. Yuan, Z. L., Ding, X. M., Lai, B., Hou, X. Y., Lu, E. D., Xu, P. S., and Zhang, X. Y. Appl. Phys. Lett. 1998, 73, 2977
21. Hammond, C., Back, A., Lawrence, M., Nebesny, K., Lee, P., Schlaf, R., and Armstrong, N. R. J. Vac. Sci. Technol., A 1995, 13, 1768
22. Yablonovitch, E., Sandroff, C. J., Bhat, R., and Gmitter, T. Appl. Phys. Lett. 1987, 51, 439
23. Kim, H., Colavita, P. E., Metz, K. M., Nichols, B. M., Sun, B., Uhlrich, J., Wang, X., Kuech, T. F., and Hamers, R. J. Langmuir 2006, 22, 8121
24. Green, M. L. H., Mountford, P., Smout, G. J., and Speel, S. R. Polyhedron 1990, 9, 2763
25. Bansal, A., Li, X., Lauermann, I., and Lewis, N. S. J. Am. Chem. Soc. 1996, 118, 7225
26. Yu, H. Z., Morin, S., Wayner, D. D. M., Allongue, P., and Villeneuve, C. H. J. Phys. Chem. B 2000, 104, 11157
27. Gerlich, D., Cullen, G. W., and Amick, J. A. J. Electrochem. Soc. 1962, 109, 133
28. Amick, J. A., Cullen, G. W., and Gerlich, D. J. Electrochem. Soc. 1962, 109, 127
29. Cullen, G. W., Amick, J. A., and Gerlich, D. J. Electrochem. Soc. 1962, 109, 124
30. Lockett, M. R. and Smith, L. M. Langmuir 2009, 25, 3340
31. Haber, J. A. and Lewis, N. S. J. Phys. Chem. B 2002, 106, 3639
32. Practical Surface Analysis by Auger and X-ray Photoelectron Spectroscopy; Briggs, D. and Seah, M. P., Eds.; John Wiley & Sons: New York, 1984.
33. Morota, H. and Adachi, S. J. Appl. Phys. 2006, 100, 054904
34. Pies, W. and Weiss, A. Crystal Structure Data of Inorganic Compounds; Springer-Verlag: Berlin, 1979; Vol. 7.
35. A is Avogadro's number
36. McLennan, J. C. and Plummer, W. G. Nature 1928, 122, 571
37. Bock, C. W. and Trachtman, M. J. Phys. Chem. 1994, 98, 95
38. Shriver, D. F. and Drezdzon, M. A. The Manipulation of Air-Sensitive Compounds; Wiley: New York, 1986.
39. Mao, O., Altounian, Z., and StromOlsen, J. O. Rev. Sci. Instrum. 1997, 68, 2438
40. Radde, A. and Kolditz, L. Z. Chem. 1983, 23, 436
41. Amy, S. R., Michalak, D. J., Chabal, Y. J., Wielunski, L., Hurley, P. T., and Lewis, N. S. J. Phys. Chem. C 2007, 111, 13053
42. Bain, C. D., Evall, J., and Whitesides, G. M. J. Am. Chem. Soc. 1988, 111, 7155
43. Lummerstorfer, T., Kattner, J., and Hoffmann, H. Anal. Bioanal. Chem. 2007, 388, 55
44. Barr, T. L. and Seal, S. J. Vac. Sci. Technol., A 1995, 13, 1239
45. Mizokawa, Y., Geib, K. M., and Wilmsen, C. W. J. Vac. Sci. Technol., A 1985, 4, 1696
46. McCaulley, J. A., McCrary, V. R., and Donnelly, V. M. J. Phys. Chem. B 1989, 93, 1148
47. Webb, L. J., Nemanick, E. J., Biteen, J. S., Knapp, D., Michalak, D. J., Traub, M. C., Chan, A. S. Y., Brunschwig, B. S., and Lewis, N. S. J. Phys. Chem. B 2005, 109, 3930
48. Pressman, L. D., Forrest, S. R., Bonner, W. A., and Vanuitert, L. G. Appl. Phys. Lett. 1982, 41, 969
49. Maldonado, S., Plass, K. E., Knapp, D., and Lewis, N. S. J. Phys. Chem. C 2007, 111, 17690
50. Pulfrey, D. L. IEEE Trans. Electron Devices 1978, 25, 1308
51. Wyman, D. P., Freeman, W. R., and Wang, J. Y. C. J. Org. Chem. 1963, 28, 3173
52. Lee, M. K. J. Electrochem. Soc. 1984, 131, C93
53. Marion, N., Escudero, E. C., Benet-Buchholz, J., Stevens, E. D., Fensterbank, L., Malacria, M., and Nolan, S. P. Organometallics 2007, 26, 3256
54. Johansson, E., Hurley, P. T., Brunschwig, B. S., and Lewis, N. S. J. Phys. Chem. C 2009, 113, 15239
55. Yu, H. B., Webb, L. J., Ries, R. S., Solares, S. D., Goddard, W. A., Heath, J. R., and Lewis, N. S. J. Phys. Chem. B 2005, 109, 671
56. Khaselev, O. and Turner, J. A. Science 1998, 280, 425
57. Fonash, S. Solar Cell Device Physics; Academic Press: New York, 1982.
58. Sharp, I. D., Schoell, S. J., Hoeb, M., Brandt, M. S., and Stutzmann, M. Appl. Phys. Lett. 2008, 92, 223306(1)
59. Maldonado, S., Knapp, D., and Lewis, N. S. J. Am. Chem. Soc. 2008, 130, 3300
60. Har-Lavan, R., Ron, I., Thieblemont, F., and Cahen, D. Appl. Phys. Lett. 2009, 043308(1-3).