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Volumn 129, Issue 4, 2007, Pages 734-735

Effect of chemical bond type on electron transport in GaAs-chemical bond-alkyl/Hg junctions

Author keywords

[No Author keywords available]

Indexed keywords

ALKYL GROUP; ARSENIC; GALLIUM; MERCURY;

EID: 33846634761     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja065399r     Document Type: Article
Times cited : (23)

References (25)
  • 22
    • 33846615581 scopus 로고    scopus 로고
    • In the absence of non-bonding orbitals, the stronger the molecule/semiconductor bond, the larger the energy gap between the occupied and unoccupied molecular levels and between each of those and the Fermi level, which could lead to increased tunnel barriers. However, as we show elsewhere, 2f the levels most likely to control tunneling are interface-induced states between these molecular levels and the GaAs band edges
    • 2f the levels most likely to control tunneling are interface-induced states between these molecular levels and the GaAs band edges.
  • 25
    • 33846611094 scopus 로고    scopus 로고
    • No differences were found between n- and p-GaAs
    • No differences were found between n- and p-GaAs.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.