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In the absence of non-bonding orbitals, the stronger the molecule/semiconductor bond, the larger the energy gap between the occupied and unoccupied molecular levels and between each of those and the Fermi level, which could lead to increased tunnel barriers. However, as we show elsewhere, 2f the levels most likely to control tunneling are interface-induced states between these molecular levels and the GaAs band edges
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2f the levels most likely to control tunneling are interface-induced states between these molecular levels and the GaAs band edges.
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23
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(a) Moore, A. M.; Dameron, A. A.; Mantooth, B. A.; Smith, R. K.; Fuchs, D. J.; Ciszek, J. W.; Maya, F.; Yao, Y.; Tour, J. M.; Weiss, P. S. J. Am. Chem. Soc. 2006, 128, 1959.
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25
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33846611094
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No differences were found between n- and p-GaAs
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No differences were found between n- and p-GaAs.
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