Grafting of molecular layers to oxidized gallium nitride surfaces via phosphonic acid linkages

Surface Science

Volumn 602, Issue 14, 2008, Pages 2382-2388

  Kim, Heesuk ^a   Colavita, Paula E ^a   Paoprasert, Peerasak ^a   Gopalan, Padma ^a   Kuech, T F ^b   Hamers, Robert J ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b University of Wisconsin Madison   (United States)

Author keywords

Alkenes; Chemisorption; Gallium nitride; Photochemistry; Self assembly; Solid liquid interfaces; Surface chemical reaction; X ray photoelectron spectroscopy

Indexed keywords

ACIDS; FOURIER TRANSFORMS; GALLIUM; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; GRAFTING (CHEMICAL); HYDROCARBONS; INFRARED SPECTROSCOPY; LITHOGRAPHY; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; MOLECULES; OLEFINS; ORGANIC ACIDS; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING GALLIUM; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS; SULFUR COMPOUNDS; SYSTEM STABILITY;

(1 1 0) SURFACE; (Z) ALKENES; BASIC CONDITIONS; BIOMOLECULAR LAYERS; BUFFER SOLUTIONS; ELSEVIER (CO); FOURIER; GAN (0 0 0 1); MOLECULAR LAYERS; NEUTRAL CONDITIONS; ORGANOPHOSPHONIC ACIDS; PHOSPHONIC ACIDS; TRANSFORM INFRA RED SPECTROSCOPY; WIDE-BAND-GAP SEMICONDUCTORS; X RAY PHOTOELECTRON SPECTROSCOPY (XPS);

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 48149100599     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2008.05.002     Document Type: Article

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