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Volumn 118, Issue 30, 1996, Pages 7225-7226

Alkylation of Si surfaces using a two-step halogenation/Grignard route

Author keywords

[No Author keywords available]

Indexed keywords

ALKYLATION; ARTICLE; ELECTRODE; REACTION ANALYSIS; SURFACE PROPERTY;

EID: 0029780707     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja960348n     Document Type: Article
Times cited : (423)

References (34)
  • 22
    • 9344226246 scopus 로고    scopus 로고
    • note
    • Derivatized samples were rinsed with dry THF and dry methanol under an anaerobic environment and were then sonicated (in air) in methanol and methylene chloride for 5 min each.
  • 27
    • 9344223421 scopus 로고    scopus 로고
    • note
    • -1 for H-terminated Si(111) surfaces even though they were covered with adventitious carbon. (b) The small intensity of this peak is likely due to the small dipolar scattering contribution of the Si-C stretch mode (due to a small dipole derivative of the Si-C bond), unlike the Si-H modes which have a considerable impact scattering contribution.
  • 30
    • 9344226245 scopus 로고    scopus 로고
    • note
    • 5 type linkages are not formed at the surface upon alkylation.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.