Alkylation of Si surfaces using a two-step halogenation/Grignard route

Journal of the American Chemical Society

Volumn 118, Issue 30, 1996, Pages 7225-7226

  Bansal, Ashish ^a   Li, Xiuling ^a   Lauermann, Iver ^a   Lewis, Nathan S ^a   Yi, Sang I ^b   Weinberg, W H ^b  

^a California Institute of Technology   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALKYLATION; ARTICLE; ELECTRODE; REACTION ANALYSIS; SURFACE PROPERTY;

EID: 0029780707     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja960348n     Document Type: Article

References (34)

1. Wolf, S.; Tauber, R. N. Silicon Processing for the VLSI Era; Lattice Press: Sunset Beach, 1986.
2. (a) Linford, M. R.; Chidsey, C. E. D. J. Am. Chem. Soc. 1993, 115, 12631.
3. (b) Linford, M. R.; Fenter, P.; Eisenberger, P. M.; Chidsey, C. E. D. J. Am. Chem. Soc: 1995, 117, 3145.
4. (a) Lauerhaas, J. M.; Sailor, M. J. Science 1993, 261, 1567.
5. (b) Lee, E. J.; Ha, J. S.; Sailor, M. J. J. Am. Chem. Soc. 1995, 117, 8295.
6. (c) Allongue, P.; Kieling, V.; Gerischer, H. J. Phys. Chem. 1995, 99, 9472.
7. (d) Ando, A.; Miki, K.; Matsumoto, K.; Shimizu, T.; Morita, Y.; Tokumoto, H. Jpn. J. Appl. Phys. 1996, 35, 1064.
8. (e) Nesterenko, B. A.; Milenin, V. V.; Gorkun, O. Y.; Stadnik, A. A.; Kazantseva, V. I. Thin Solid Films 1991, 201, 351.
9. Lei, J. A.; Bai, Y. B.; Wang, D. J.; Li, T. J.; Tian, K. E. Thin Solid Films 1994, 243, 459.
10. Sze, S. M. The Physics of Semiconductor Devices, 2nd ed.; Wiley: New York, 1981.
11. Buczkowski, A.; Radzimski, Z. J.; Rozgonyi, G. A.; Shimura, F. J. Appl. Phys. 1991, 69, 6495.
12. Lewis, N. S. Annu. Rev. Phys. Chem. 1991, 42, 543.
13. Higashi, G. S.; Chabal, G. W.; Trucks, G. W.; Raghavachari, K. Appl. Phys. Lett. 1990, 56, 656.
14. Wyman, D. P.; Wang, J. Y. C.; Freeman, W. R. J. Org. Chem. 1963, 28, 3173.
15. Hassler, K.; Koll, W. J. Organomet. Chem. 1995, 487, 223.
16. Whitman, L. J.; Joyce, S. A.; Yarmoff, J. A.; McFeely, F. R.; Terminello, L. J. Surf. Sci. 1990, 232, 297.
17. Gao, Q.; Cheng, C. C.; Chen, P. J.; Choyke, W. J.; Yates, J. T., Jr. Thin Solid Films 1993, 225, 140.
18. Gupta, P.; Coon, P. A.; Koehler, B. G.; George, S. M. Surf. Sci. 1991, 249, 92.
19. (a) Meen, R. H.; Gilman, H. J. Org. Chem. 1958, 23, 314.
20. (b) Gilman, H.; Ingham, R. K. J. Am. Chem. Soc. 1955, 77, 1680.
21. (c) Rosenberg, H.; Groves, J. D.; Tamborski, C. J. Org. Chem. 1960, 25, 243.
22. Derivatized samples were rinsed with dry THF and dry methanol under an anaerobic environment and were then sonicated (in air) in methanol and methylene chloride for 5 min each.
23. Chidsey, C. E. D.; Loiacono, D. N. Langmuir 1990, 6, 682.
24. Porter, M. D.; Bright, T. B.; Allara, D. L.; Chidsey, C. E. D. J. Am. Chem. Soc. 1987, 109, 3559.
25. -1.
26. Widdra, W.; Huang, C.; Briggs, G. A. D.; Weinberg, W. H. J. Electron. Spec. Rel. Phenom. 1993, 64-5, 129.
27. -1 for H-terminated Si(111) surfaces even though they were covered with adventitious carbon. (b) The small intensity of this peak is likely due to the small dipolar scattering contribution of the Si-C stretch mode (due to a small dipole derivative of the Si-C bond), unlike the Si-H modes which have a considerable impact scattering contribution.
28. Coon, P. A.; Wise, M. L.; Dillon, A. C.; Robinson, M. B.; George, S. M. J. Vac. Sci. Technol. 1992, B10, 221.
29. Coon, P. A.; Wise, M. L.; George, S. M. J. Chem. Phys. 1993, 98, 7485.
30. 5 type linkages are not formed at the surface upon alkylation.
31. (a) Rosenbluth, M. L.; Lewis, N. S. J. Am. Chem. Soc. 1986, 108, 4689.
32. (b) Pomykal. K. E.; Fajardo, A. M.; Lewis, N. S. J. Phys. Chem. 1995, 99, 8302.
33. Tufts, B. J.; Kumar, A.; Bansal, A.; Lewis, N. S. J. Phys. Chem. 1992, 96, 4581.
34. Mende, G.; Finster, J.; Flamm, D.; Schulze, D. Surf. Sci. 1983, 128, 169.