Positive gate-bias temperature stability of RF-sputtered Mg 0.05Zn 0.95O active-layer thin-film transistors

IEEE Transactions on Electron Devices

Volumn 59, Issue 1, 2012, Pages 151-158

  Tsai, Yi Shiuan ^a   Chen, Jian Zhang ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Gate bias stability; MgO; MgZnO; oxide thin film transistors (TFTs); thermal stability

Indexed keywords

ACTIVE LAYER; BACK CHANNELS; CRYSTALLINITIES; ELECTRICAL CHARACTERISTIC; ELEVATED TEMPERATURE; GATE-BIAS STRESS; LEAKAGE PATHS; META-STABLE; MGO; MGZNO; NEUTRAL DEFECTS; PARASITIC TRANSISTORS; POSITIVE GATE BIAS; STABLE PHASE; SUBTHRESHOLD REGION; TEMPERATURE STABILITY; TRANSFER CHARACTERISTICS; TRANSFER CURVES; ZNO CRYSTALS;

ANNEALING; ELECTRIC FIELDS; HETEROJUNCTION BIPOLAR TRANSISTORS; LEAKAGE (FLUID); STABILITY; THERMODYNAMIC STABILITY; TRANSISTORS; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84855449286     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2172212     Document Type: Article

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