Light effect on negative bias-induced instability of HfInZnO amorphous oxide thin-film transistor

IEEE Transactions on Electron Devices

Volumn 58, Issue 4, 2011, Pages 1127-1133

  Kwon, Dae Woong ^a   Kim, Jang Hyun ^a   Chang, Ji Soo ^a   Kim, Sang Wan ^a   Kim, Wandong ^a   Park, Jae Chul ^b   Kim, Chang Jung ^b   Park, Byung Gook ^a  

^a Seoul National University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Hafniumindiumzincoxide (HIZO) thin film transistors (TFTs); light induced effect on HIZO TFT; stability of HIZO TFT

Indexed keywords

AMORPHOUS OXIDES; COMPREHENSIVE STUDIES; DC BIAS; EDGE REGION; GATE INSULATOR; HOLE TRAPPING; HYSTERESIS ANALYSIS; LIGHT EFFECTS; LIGHT STRESS; NEGATIVE BIAS; NEGATIVE GATE; NEGATIVE V; ROOM TEMPERATURE; SUBTHRESHOLD SWING; TRANSFER CURVES;

AMORPHOUS FILMS; DEGRADATION; HOLE TRAPS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON COMPOUNDS; STABILITY;

THIN FILM TRANSISTORS;

EID: 79953090083     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2109388     Document Type: Article

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