Negative bias temperature instability of Rf-sputtered Mg 0.05Zn0.95O thin film transistors with MgO gate dielectrics

Semiconductor Science and Technology

Volumn 26, Issue 10, 2011, Pages

  Li, Chih Hung ^a   Tsai, Yi Shiuan ^a   Chen, Jian Z ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; ANNEALING CONDITION; DEFECT CREATION; ELECTRICAL CHARACTERISTIC; NEGATIVE BIAS TEMPERATURE INSTABILITY; NEGATIVE SHIFT; ROOM TEMPERATURE;

ANNEALING; BIAS VOLTAGE; GATE DIELECTRICS; INTEGRATED CIRCUITS; NEGATIVE TEMPERATURE COEFFICIENT; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE; ZINC;

THIN FILM TRANSISTORS;

EID: 80053368778     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/10/105007     Document Type: Article

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