SCOPUS 정보 검색 플랫폼

Volumn 109, Issue 6, 2011, Pages

A study of the specific contact resistance and channel resistivity of amorphous IZO thin film transistors with IZO source-drain metallization

(3) Lee, Sunghwan a Park, Hongsik a Paine, David C a

a Brown University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS OXIDES; ANNEALED STATE; AS-DEPOSITED STATE; CARRIER DENSITY; CHANNEL DEVICE; CHANNEL LAYERS; CHANNEL RESISTIVITY; DEVICE APPLICATION; GATE VOLTAGES; HOMO-JUNCTIONS; LOW CARRIER DENSITY; METALLIZATIONS; OFF-STATE CURRENT; POSITIVE GATE BIAS; SOURCE-DRAIN; SPECIFIC CONTACT RESISTANCES; TRANSMISSION LINE MODELS; ZERO BIAS;

AMORPHOUS FILMS; ANNEALING; BIAS VOLTAGE; CARRIER CONCENTRATION; CONDUCTIVE FILMS; CONTACT RESISTANCE; METALLIZING; THIN FILMS;

THIN FILM TRANSISTORS;

EID: 79953656609 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3549810 Document Type: Article

Times cited : (80)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.