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Volumn 108, Issue 5, 2010, Pages

Two dimensional electron gases in polycrystalline MgZnO/ZnO heterostructures grown by rf-sputtering process

(9) Chin, Huai An a Cheng, I Chun a Huang, Chih I a Wu, Yuh Renn a Lu, Wen Sen b Lee, Wei Li b Chen, Jian Z c Chiu, Kuo Chuang d Lin, Tzer Shen d

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b INSTITUTE OF PHYSICS (Taiwan)

c NATIONAL TAIWAN UNIVERSITY (Taiwan)

d INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY POTENTIALS; CAP LAYERS; CARRIER DENSITY; DRIFT DIFFUSION; FINITE-ELEMENT; GRAIN BOUNDARY SCATTERING; HALL MEASUREMENTS; HETEROSTRUCTURES; INDUCED CHARGES; INTERFACIAL POLARIZATION; LOW TEMPERATURES; MG CONTENT; MONTE CARLO SIMULATION; POLYCRYSTALLINE; RESISTANCE REDUCTION; RF-SPUTTERING; ROUGHNESS SCATTERING; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

ELECTRIC RESISTANCE; ELECTRON GAS; FINITE ELEMENT METHOD; GALVANOMAGNETIC EFFECTS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HALL MOBILITY; HETEROJUNCTIONS; POLARIZATION; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS;

MONTE CARLO METHODS;

EID: 77956848163 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3475500 Document Type: Article

Times cited : (79)

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