Analysis of hump characteristics in thin-film transistors with ZnO channels deposited by sputtering at various oxygen partial pressures

IEEE Electron Device Letters

Volumn 31, Issue 11, 2010, Pages 1257-1259

  Furuta, Mamoru ^a   Kamada, Yudai ^b   Kimura, Mutsumi ^c   Hiramatsu, Takahiro ^a   Matsuda, Tokiyoshi ^a   Furuta, Hiroshi ^a   Li, Chaoyang ^a   Fujita, Shizuo ^b   Hirao, Takashi ^a  

^a KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c RYUKOKU UNIVERSITY   (Japan)

Author keywords

Hump characteristics; intrinsic defects; sputtering; thermal desorption spectroscopy (TDS); thin film transistors (TFTs); trap density; zinc oxide

Indexed keywords

CRITICAL PRESSURES; ELECTRICAL PROPERTY; HUMP CHARACTERISTIC; INTERMEDIATE ENERGIES; INTRINSIC DEFECTS; NATIVE DEFECT; NEGATIVE SHIFT; OXYGEN PARTIAL PRESSURE; RADIO-FREQUENCY-MAGNETRON SPUTTERING; RICH CONDITIONS; TRAP DENSITY; TURN ON VOLTAGE; ZNO; ZNO FILMS;

DEFECTS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; OXYGEN; PARTIAL PRESSURE; SURFACE CHEMISTRY; THERMAL DESORPTION; THERMAL DESORPTION SPECTROSCOPY; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 78049282827     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2068276     Document Type: Article

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