Highly stable amorphous-silicon thin-film transistors on clear plastic

Applied Physics Letters

Volumn 93, Issue 3, 2008, Pages

  Hekmatshoar, Bahman ^a   Cherenack, Kunigunde H ^a   Kattamis, Alex Z ^a   Long, Ke ^a   Wagner, Sigurd ^a   Sturm, James C ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM COMPOUNDS; CHARGE TRAPPING; HYDROGEN; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; LUMINESCENCE; NITRIDES; NONMETALS; OPTICAL DESIGN; ORGANIC LIGHT EMITTING DIODES (OLED); PLASTICS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON NITRIDE; THIN FILM DEVICES; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; TRANSISTORS;

AMERICAN INSTITUTE OF PHYSICS (AIP); AMORPHOUS-SILICON THIN-FILM TRANSISTORS; DEFECT CREATION; GATE FIELDS; HIGH DEPOSITION TEMPERATURE; HIGH QUALITY (HQ); HYDROGEN DILUTION; PHOSPHORESCENT ORGANIC LIGHT EMITTING DIODES; THIN FILM TRANSISTOR (TFT); THRESHOLD VOLTAGE SHIFTS;

AMORPHOUS SILICON;

EID: 48249104792     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2963481     Document Type: Article

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