Ferroelectric properties in piezoelectric semiconductor Zn1-xMxO (M=Li, Mg)

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 9 SUPPL. B, 1997, Pages 6008-6011

  Onodera, Akira ^a   Tamaki, Norihiko ^a   Jin, Kazuo ^b   Yamashita, Haruyasu ^c  

^a HOKKAIDO UNIVERSITY   (Japan)

^b HOKKAIDO INSTITUTE OF PUBLIC HEALTH   (Japan)

^c HOKKAI GAKUEN UNIVERSITY   (Japan)

Author keywords

Ferroelectric; Ferroelectric semiconductor; II VI semiconductor; Phase transition; Piezoelectric; Zinc oxide

Indexed keywords

FERROELECTRIC MATERIALS; ION IMPLANTATION; LITHIUM; MAGNESIUM; PHASE TRANSITIONS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; ZINC OXIDE;

ION CONCENTRATION EFFECTS;

PIEZOELECTRIC MATERIALS;

EID: 0031222979     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6008     Document Type: Article

References (27)

1. H. Bilz, A. Bussmann-Holder, W. Jantsch and P. Vogl: Dynamical Properties of IV-VI Compounds (Springer-Verlag, Berlin, 1983).
2. L. L. Boyer: Ferroelectrics 35 (1981) 83.
3. P. Littlewood and V. Heine: J. Phys. C 12 (1979) 4431.
4. S. Katayama and K. Murase: Solid State Commun. 36 (1980) 707.
5. W. Cochran, R. A. Cowley, G. Dolling and M. M. Elcombe: Proc. R. Soc. (London) A 293 (1966) 433.
6. W. Jantsch, A. Lopez-Otero and G. Bauer: Infrared Phys. 18 (1978) 877.
7. K. Murase and S. Sugai: Solid State Commun. 32 (1979) 89.
8. W. Jantsch, G. Bauer and A. Lopez-Otero: Proc. 14th Int. Conf. Phys. of Semiconductors (The Institute of Physics, Bristol and London, 1979) p. 445.
9. R. Weil, R. Nkum, E. Muranevich and L. Benguigui: Phys. Rev. Lett. 62 (1989) 2744.
10. A. Marbeuf, C. Mondoloni, R. Triboulet and J. Rioux: Solid State Commun. 75 (1990) 275.
11. E. Fredj, R. Weil, E. Muranevich and L. Benguigui: Ferroelectrics 125 (1992) 57.
12. A. Onodera, N. Tamaki, Y. Kawamura, T. Sawada and H. Yamashita: Jpn. J. Appl. Phys. 35 (1996) 5160.
13. N. Tamaki, A. Onodera, T. Sawada and H. Yamashita: J. Kor. Phys. Soc. 29 (1996) S668.
14. J. C. Phillips: Bonds and Bands in Semiconductors (Academic Press, London and New York, 1973) Chap. 2.
15. Y. Yoneda, K. Sakaue, H. Terauchi, H. Kasatani and N. Kuroda: Trans. Mater. Res. Soc. Jpn. 14B (1994) 1755.
16. F. S. Hickernell: IEEE Trans. MTT 17 (1969) 957.
17. C. Campbell: Surface Acoustic Wave Devices and Their Signal Processing Applications (Academic Press, San Diego, 1989).
18. T. Shiosaki, M. Ooishi, S. Ohnishi and A. Kawabata: Proc. 1st Meet. Ferroelectric Materials and Their Applications (Kyoto, 1977) p. 43.
19. E. D. Kolb and R. A. Laudise: J. Am. Ceram. Soc. 49 (1966) 302.
20. N. Sakagami: J. Cryst. Growth 99 (1990) 905.
21. P. Schroer, P. Kruger and J. Pollmann: Phys. Rev. B 47 (1993) 6971.
22. J. E. Jaffe and A. C. Hess: Phys. Rev. B 48 (1993) 7903.
23. A. D. Corso, M. Posternak, R. Resta and A. Baldereschi: Phys. Rev. B 50 (1994) 10715.
24. O. Zakharov, A. Rubio, X. Blase, M. L. Coben and S. G. Louie: Phys. Rev. B 50 (1994) 10780.
25. S. Massidda, R. Resta, M. Posternak and A. Baldereschi: Phys. Rev. B 52 (1995) R16977.
26. J. Albertsson, S. C. Abrahams and A. Kvick: Acta Crystallogr. B 45 (1989) 34.
27. A. Onodera, N. Tamaki, H. Yamashita and A. Sakai: in preparation.