SCOPUS 정보 검색 플랫폼

Volumn 14, Issue 4, 2011, Pages

Effects of ambient atmosphere on electrical characteristics of Al 2O3 passivated InGaZnO thin film transistors during positive-bias-temperature-stress operation

(10) Huang, Sheng Yao a Chang, Ting Chang a,b Chen, Min Chen a Chen, Shih Ching a Tsai, Chih Tsung a Hung, Ming Chin c Tu, Chun Hao c Chen, Chia Hsiang c Chang, Jiun Jye c Liau, Wei Lung c

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

c Advanced Display Technology Research Center (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT ATMOSPHERE; BACK CHANNELS; BIAS STRESS; ELECTRICAL BEHAVIORS; ELECTRICAL CHARACTERISTIC; HUMP EFFECT; PASSIVATION LAYER; POSITIVE BIAS TEMPERATURES; TEMPERATURE STRESS; TRANSFER CURVES; WATER-VAPOR ABSORPTION;

ALUMINUM; PASSIVATION; THIN FILM TRANSISTORS; THIN FILMS; WATER ABSORPTION;

WATER VAPOR;

EID: 79951917293 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3534828 Document Type: Article

Times cited : (77)

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