Transparent thin film transistors using ZnO as an active channel layer and their electrical properties

Journal of Applied Physics

Volumn 93, Issue 3, 2003, Pages 1624-1630

  Masuda, Satoshi ^a   Kitamura, Ken ^a   Okumura, Yoshihiro ^a   Miyatake, Shigehiro ^a   Tabata, Hitoshi ^b   Kawai, Tomoji ^b  

^a Konica Corporation   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; FABRICATION; GATES (TRANSISTOR); GLASS; LEAKAGE CURRENTS; OPACITY; PULSED LASER DEPOSITION; SILICA; SILICON NITRIDE; SILICON WAFERS; TRANSPARENCY; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

ACTIVE CHANNEL LAYERS;

THIN FILM TRANSISTORS;

EID: 0037323096     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1534627     Document Type: Article

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