Structural and electrical properties of ZnO thin films deposited by atomic layer deposition at low temperatures

Journal of the Electrochemical Society

Volumn 155, Issue 10, 2008, Pages

  Jeon, Sunyeol ^a   Bang, Seokhwan ^a   Lee, Seungjun ^a   Kwon, Semyung ^a   Jeong, Wooho ^a   Jeon, Hyeongtag ^a,d   Chang, Ho Jung ^b   Park, Hyung Ho ^c  

^a Hanyang University   (South Korea)

^b Dankook University   (South Korea)

^c Yonsei University   (South Korea)

^d ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; BIOACTIVITY; CARRIER CONCENTRATION; CIVIL AVIATION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; DEPOSITION RATES; ELECTRIC PROPERTIES; METALLIC FILMS; NONMETALS; OPTICAL FILMS; OXYGEN; PHYSICAL VAPOR DEPOSITION; POWDERS; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; SOLIDS; THICK FILMS; THIN FILMS; ZINC; ZINC ALLOYS; ZINC OXIDE;

ATOMIC LAYER DEPOSITIONS; CHEMICAL RATIO; COLUMNAR CRYSTALS; ELECTRICAL PROPERTIES; LOW TEMPERATURES; OXYGEN DEFICIENCIES; PREFERRED ORIENTATIONS; PROCESS PARAMETERS; PROCESS TEMPERATURES; ZNO THIN FILMS;

ATOMIC LAYER DEPOSITION;

EID: 51849104724     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2957915     Document Type: Article

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