Reliability mechanisms of LTPS-TFT with HfO2 gate dielectric: PBTI, NBTI, and hot-carrier stress

IEEE Transactions on Electron Devices

Volumn 55, Issue 5, 2008, Pages 1153-1160

  Ma, Ming Wen ^a   Chen, Chi Yang ^a   Wu, Woei Cheng ^a   Su, Chun Jung ^a   Kao, Kuo Hsing ^a   Chao, Tien Sheng ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

HfO2 gate dielectric; Hot carrier stress (HCS); Low temperature polycrystalline Si thin film transistor (LTPS TFT); Negative bias temperature instability (NBTI); Positive bias temperature instability (PBTI); Reliability

Indexed keywords

GRAIN BOUNDARIES; HOT CARRIERS; LOW TEMPERATURE PROPERTIES; POLYSILICON; SEMICONDUCTING SILICON; THERMODYNAMIC STABILITY;

HOT-CARRIER STRESS (HCS); NEGATIVE-BIAS TEMPERATURE INSTABILITY (NBTI); POSITIVE-BIAS TEMPERATURE INSTABILITY (PBTI); RELIABILITY MECHANISMS;

THIN FILM TRANSISTORS;

EID: 43749100691     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.919710     Document Type: Article

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