Transparent thin-film transistors with zinc indium oxide channel layer

Journal of Applied Physics

Volumn 97, Issue 6, 2005, Pages

  Dehuff, N L ^a   Kettenring, E S ^a   Hong, D ^a   Chiang, H Q ^a   Wager, J F ^a   Hoffman, R L ^b   Park, C H ^c   Keszler, D A ^c  

^a Oregon State University   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

^c OREGON STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; DRAIN CURRENT; TRANSPARENT THIN-FILM TRANSISTOR (TTFT); ZINCC INDIUM OXIDE (ZIO);

ANNEALING; ELECTRIC CURRENTS; LIGHT TRANSMISSION; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTING ZINC COMPOUNDS; THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 20644459026     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1862767     Document Type: Article

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