Low frequency noise analysis of top-gate MgZnO thin-film transistor with High- ZrO2 gate insulator

Electrochemical and Solid-State Letters

Volumn 14, Issue 9, 2011, Pages

  Chiu, Hsien Chin ^a   Wang, Hsiang Chun ^a   Lin, Che Kai ^a   Chiu, Chau Wei ^a   Fu, Jeffrey S ^a   Hsueh, Kuang Po ^b   Chien, Feng Tso ^c  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b VANUNG UNIVERSITY   (Taiwan)

^c FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; ENERGY BANDGAPS; FLICKER NOISE; GATE INSULATOR; GATE LEAKAGES; INDUCED NOISE; LOW-FREQUENCY NOISE; LOW-FREQUENCY NOISE SPECTRA; POST ANNEALING; POST-ANNEALING TEMPERATURE; RADIO FREQUENCY MAGNETRON SPUTTERING; TOP-GATE;

ANNEALING; BINDING ENERGY; DEPOSITION; MAGNESIUM; PHOTOELECTRON SPECTROSCOPY; THERMAL NOISE; THIN FILM DEVICES; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZIRCONIA; ZIRCONIUM; ZIRCONIUM ALLOYS;

THIN FILM TRANSISTORS;

EID: 79960203876     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3606545     Document Type: Article

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