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Volumn 98, Issue 10, 2011, Pages

Effects of chemical stoichiometry of channel region on bias instability in ZnO thin-film transistors

(7) Kamada, Yudai a Fujita, Shizuo a Kimura, Mutsumi b Hiramatsu, Takahiro c Matsuda, Tokiyoshi c Furuta, Mamoru c Hirao, Takashi c

a KYOTO UNIVERSITY (Japan)

b RYUKOKU UNIVERSITY (Japan)

c KOCHI UNIVERSITY OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS INSTABILITY; BIAS POLARITY; CHANNEL LAYERS; CHANNEL REGION; CHEMICAL STOICHIOMETRY; DRAIN BIAS; OXYGEN PARTIAL PRESSURE; THRESHOLD VOLTAGE SHIFTS; TRAP GENERATION; UNDER GATE; ZNO;

OXYGEN; STOICHIOMETRY; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; ZINC OXIDE;

BIAS VOLTAGE;

EID: 79952639552 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3557066 Document Type: Article

Times cited : (18)

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