Analysis of bias stress instability in amorphous InGaZnO thin-film transistors

IEEE Transactions on Device and Materials Reliability

Volumn 11, Issue 1, 2011, Pages 112-117

  Cho, Edward Namkyu ^a   Kang, Jung Han ^a   Kim, Chang Eun ^a   Moon, Pyung ^a   Yun, Ilgu ^a  

^a Yonsei University   (South Korea)

Author keywords

Density of states (DOS); electrical instability; InGaZnO (IGZO); modeling; thin film transistors (TFTs)

Indexed keywords

DENSITY OF STATE; ELECTRICAL INSTABILITY; INGAZNO (IGZO); MODELING; THIN-FILM TRANSISTORS (TFTS);

AMORPHOUS FILMS; ELECTRON TRAPS; STABILITY;

THIN FILM TRANSISTORS;

EID: 79952855765     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2010.2096508     Document Type: Article

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