Room temperature growth of zinc oxide films on Si substrates by the RF magnetron sputtering

Materials Letters

Volumn 58, Issue 6, 2004, Pages 938-943

  Kim, Nam Ho ^a   Kim, Hyoun Woo ^a  

^a Inha University   (South Korea)

Author keywords

RF power; Room temperature; Thin film; ZnO

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; FILM GROWTH; ION BOMBARDMENT; LOW TEMPERATURE EFFECTS; MAGNETRON SPUTTERING; SCANNING ELECTRON MICROSCOPY; SILICON; STRESS ANALYSIS; SUBSTRATES; SURFACE ROUGHNESS; THICKNESS MEASUREMENT; X RAY DIFFRACTION; ZINC OXIDE;

RADIO FREQUENCY (RF) POWER; ROOM TEMPERATURE;

THIN FILMS;

EID: 0348231831     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2003.07.040     Document Type: Article

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